是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SC-89 | 包装说明: | SMALL OUTLINE, R-PDSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.84 | Is Samacsys: | N |
其他特性: | BUILT IN BIAS RESISTOR RATIO IS 1 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 35 | JESD-30 代码: | R-PDSO-F3 |
JESD-609代码: | e6 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Tin/Bismuth (Sn/Bi) |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 80 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UNR9111J(UN9111J) | ETC |
获取价格 |
Composite Device - Transistors with built-in Resistor | |
UNR9111J|UN9111J | ETC |
获取价格 |
Composite Device - Transistors with built-in Resistor | |
UNR9112 | ETC |
获取价格 |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 | |
UNR9112G | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO | |
UNR9112J | PANASONIC |
获取价格 |
Silicon PNP epitaxial planar type | |
UNR9112J(UN9112J) | ETC |
获取价格 |
Composite Device - Transistors with built-in Resistor | |
UNR9112J|UN9112J | ETC |
获取价格 |
Composite Device - Transistors with built-in Resistor | |
UNR9113 | ETC |
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TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 | |
UNR9113G | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO | |
UNR9113J | PANASONIC |
获取价格 |
Silicon PNP epitaxial planar type |