5秒后页面跳转
UNR9111J PDF预览

UNR9111J

更新时间: 2024-11-20 22:00:23
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管开关光电二极管
页数 文件大小 规格书
19页 478K
描述
Silicon PNP epitaxial planar type

UNR9111J 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-89包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84Is Samacsys:N
其他特性:BUILT IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):35JESD-30 代码:R-PDSO-F3
JESD-609代码:e6湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

UNR9111J 数据手册

 浏览型号UNR9111J的Datasheet PDF文件第2页浏览型号UNR9111J的Datasheet PDF文件第3页浏览型号UNR9111J的Datasheet PDF文件第4页浏览型号UNR9111J的Datasheet PDF文件第5页浏览型号UNR9111J的Datasheet PDF文件第6页浏览型号UNR9111J的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR911xJ Series (UN911xJ Series)  
Silicon PNP epitaxial planar type  
Unit: mm  
+0.05  
1.60  
–0.03  
+0.03  
For digital circuits  
0.12  
–0.01  
1.00 0.05  
3
Features  
Costs can be reduced through downsizing of the equipment and  
1
2
reduction of the number of parts.  
SS-Mini type package, allowing automatic insertion through tape  
packing.  
0.27 0.02  
(0.50)(0.50)  
Resistance by Part Number  
5˚  
Marking Symbol (R1)  
(R2)  
UNR9110J (UN9110J) 6L  
47 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
UNR9111J (UN9111J) 6A  
UNR9112J (UN9112J) 6B  
UNR9113J (UN9113J) 6C  
UNR9114J (UN9114J) 6D  
UNR9115J (UN9115J) 6E  
UNR9116J (UN9116J) 6F  
UNR9117J (UN9117J) 6H  
UNR9118J (UN9118J) 6I  
UNR9119J (UN9119J) 6K  
10 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
5.1 kΩ  
10 kΩ  
100 kΩ  
47 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
47 kΩ  
47 kΩ  
47 kΩ  
2.2 kΩ  
1: Base  
2: Emitter  
3: Collector  
EIAJ: SC-89  
SSMini3-F1 Package  
Internal Connection  
R1  
B
C
E
UNR911AJ  
UNR911BJ  
UNR911CJ  
6X  
6Y  
6Z  
100 kΩ  
100 kΩ  
R2  
UNR911DJ (UN911DJ) 6M  
UNR911EJ (UN911EJ) 6N  
UNR911FJ (UN911FJ) 6O  
UNR911HJ (UN911HJ) 6P  
UNR911LJ (UN911LJ) 6Q  
47 kΩ  
47 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
22 kΩ  
2.2 kΩ  
UNR911MJ  
UNR911NJ  
EI  
EW  
UNR911TJ (UN911TJ) EY  
UNR911VJ FC  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
50  
50  
V
Collector current  
IC  
PT  
Tj  
100  
mA  
mW  
°C  
Total power dissipation  
Junction temperature  
Storage temperature  
125  
125  
Tstg  
55 to +125  
°C  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: January 2004  
SJH00038BED  
1

与UNR9111J相关器件

型号 品牌 获取价格 描述 数据表
UNR9111J(UN9111J) ETC

获取价格

Composite Device - Transistors with built-in Resistor
UNR9111J|UN9111J ETC

获取价格

Composite Device - Transistors with built-in Resistor
UNR9112 ETC

获取价格

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416
UNR9112G PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
UNR9112J PANASONIC

获取价格

Silicon PNP epitaxial planar type
UNR9112J(UN9112J) ETC

获取价格

Composite Device - Transistors with built-in Resistor
UNR9112J|UN9112J ETC

获取价格

Composite Device - Transistors with built-in Resistor
UNR9113 ETC

获取价格

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416
UNR9113G PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
UNR9113J PANASONIC

获取价格

Silicon PNP epitaxial planar type