Datasheet > UNR9112J|UN9112J

UNR9112J|UN9112J

更新时间： 2024-09-15 23:39:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
19页	477K
描述
Composite Device - Transistors with built-in Resistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UNR9112J|UN9112J 数据手册

Transistors with built-in Resistor

UNR911xJ Series (UN911xJ Series)

Silicon PNP epitaxial planar type

Unit: mm

+0.05

1.60

–0.03

+0.03

For digital circuits

0.12

–0.01

1.00 0.05

■ Features

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

• SS-Mini type package, allowing automatic insertion through tape

packing.

0.27 0.02

(0.50)(0.50)

■ Resistance by Part Number

5˚

Marking Symbol (R₁)

(R₂)



• UNR9110J (UN9110J) 6L

47 kΩ

10 kΩ

22 kΩ

47 kΩ

10 kΩ

4.7 kΩ

22 kΩ

0.51 kΩ

1 kΩ

• UNR9111J (UN9111J) 6A

• UNR9112J (UN9112J) 6B

• UNR9113J (UN9113J) 6C

• UNR9114J (UN9114J) 6D

• UNR9115J (UN9115J) 6E

• UNR9116J (UN9116J) 6F

• UNR9117J (UN9117J) 6H

• UNR9118J (UN9118J) 6I

• UNR9119J (UN9119J) 6K

10 kΩ

22 kΩ

47 kΩ



5.1 kΩ

10 kΩ

100 kΩ



47 kΩ

10 kΩ

22 kΩ

10 kΩ

4.7 kΩ

47 kΩ

2.2 kΩ

1: Base

2: Emitter

3: Collector

EIAJ: SC-89

SSMini3-F1 Package

Internal Connection

R₁

• UNR911AJ

• UNR911BJ

• UNR911CJ

100 kΩ



R₂

• UNR911DJ (UN911DJ) 6M

• UNR911EJ (UN911EJ) 6N

• UNR911FJ (UN911FJ) 6O

• UNR911HJ (UN911HJ) 6P

• UNR911LJ (UN911LJ) 6Q

47 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

22 kΩ

2.2 kΩ

• UNR911MJ

• UNR911NJ

• UNR911TJ (UN911TJ) EY

• UNR911VJ FC

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

−50

Collector current

I_C

P_T

T_j

−100

°C

Total power dissipation

Junction temperature

Storage temperature

125

T_stg

−55 to +125

°C

Note) The part numbers in the parenthesis show conventional part number.

Publication date: January 2004

SJH00038BED

12 3 4 5 6 7...19

中文翻译

下载PDF

与UNR9112J|UN9112J相关器件

型号	品牌	获取价格	描述	数据表
UNR9113	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-416
UNR9113G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
UNR9113J	PANASONIC	获取价格	Silicon PNP epitaxial planar type
UNR9113J(UN9113J)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR9113J\|UN9113J	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR9114	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-416
UNR9114G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
UNR9114J	PANASONIC	获取价格	Silicon PNP epitaxial planar type
UNR9114J(UN9114J)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR9114J\|UN9114J	ETC	获取价格	Composite Device - Transistors with built-in Resistor