Datasheet > UNR9110J(UN9110J)

UNR9110J(UN9110J)

更新时间： 2024-11-24 23:39:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
18页	315K
描述
Composite Device - Transistors with built-in Resistor

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中文翻译

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数据手册

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UNR9110J(UN9110J) 数据手册

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Transistors with built-in Resistor

UNR91XXJ Series (UN91XXJ Series)

Silicon PNP epitaxial planer type

Unit: mm

+0.0ꢀ

1.60

–0.03

+0.03

For digital circuit

0.12

–0.01

1.00 0.0ꢀ

I Features

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

• SS-mini type package, allowing automatic insertion through tape

packing.

0.27 0.02

(0.ꢀ0)(0.ꢀ0)

I Resistance by Part Number

ꢀ°

Marking symbol (R₁)

(R₂)



• UNR9110J (UN9110J) 6L

47 kΩ

10 kΩ

22 kΩ

47 kΩ

10 kΩ

4.7 kΩ

22 kΩ

0.51 kΩ

1 kΩ

• UNR9111J (UN9111J) 6A

• UNR9112J (UN9112J) 6B

• UNR9113J (UN9113J) 6C

• UNR9114J (UN9114J) 6D

• UNR9115J (UN9115J) 6E

• UNR9116J (UN9116J) 6F

• UNR9117J (UN9117J) 6H

• UNR9118J (UN9118J) 6I

• UNR9119J (UN9119J) 6K

10 kΩ

22 kΩ

47 kΩ



5.1 kΩ

10 kΩ

100 kΩ



47 kΩ

10 kΩ

22 kΩ

10 kΩ

4.7 kΩ

47 kΩ

2.2 kΩ

1: Base

2: Emitter

3: Collector

EIAJ: SC-89

SSMini3-F1 Package

Internal Connection

R₁

• UNR911AJ

• UNR911BJ

• UNR911CJ

100 kΩ



R₂

• UNR911DJ (UN911DJ) 6M

• UNR911EJ (UN911EJ) 6N

• UNR911FJ (UN911FJ) 6O

• UNR911HJ (UN911HJ) 6P

• UNR911LJ (UN911LJ) 6Q

47 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

22 kΩ

2.2 kΩ

• UNR911MJ

• UNR911NJ

• UNR911TJ (UN911TJ) EY

• UNR911VJ FC

I Absolute Maximum Ratings T_a= 25°C

Parameter

Collector to base voltage

Collector to emitter voltage

Collector current

Symbol

V_CBO

V_CEO

I_C

Rating

Unit

−50

−100

°C

Total power dissipation

Junction temperature

Storage temperature

P_T

125

T_j

125

T_stg

−55 to +125

°C

Note) The part number in the parenthesis shows conventional part number.

Publication date: July 2001

SJH00038AED

12 3 4 5 6 7...18

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与UNR9110J(UN9110J)相关器件

型号	品牌	获取价格	描述	数据表
UNR9110J\|UN9110J	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR9110Q	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-416
UNR9110R	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-416
UNR9110S	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-416
UNR9111	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-416
UNR9111G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
UNR9111J	PANASONIC	获取价格	Silicon PNP epitaxial planar type
UNR9111J(UN9111J)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR9111J\|UN9111J	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR9112	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-416