Datasheet > UNR7231|UN7231

UNR7231|UN7231

更新时间： 2024-11-20 23:39:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	81K
描述
Composite Device - Transistors with built-in Resistor

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UNR7231|UN7231 数据手册

Transistors with built-in Resistor

UNR7231 (UN7231)

Silicon NPN epitaxial planar type

Unit: mm

4.5 0.1

1.6 0.2

For low-frequency amplification

1.5 0.1

■ Features

• High forward current transfer ratio h_FE

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

0.4 0.08

1.5 0.1

0.5 0.08

0.4 0.04

3˚

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

45˚

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

3.0 0.15

0.7

1: Base

2: Collector

3: Emitter

Collector current

I_C

I_CP

P_T

Peak collector current

Total power dissipation ^*

Junction temperature

Storage temperature

1.5

MiniP3-F1 Package

1.0

°C

T_j

150

Marking Symbol: IC

Internal Connection

T_stg

−55 to +150

Note) : Printed circuit board: Copper foil area of 1 cm²or more, and the

board thickness of 1.7 mm for the collector portion

R₁(1 kΩ)

R₂

(47 kΩ)

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

I_CBO

I_CEO

Conditions

I_C= 10 µA, I_E= 0

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio ^*

Collector-emitter saturation voltage ^*

Input resistance

I_C= 1 mA, I_B= 0

V_CB= 15 V, I_E= 0

V_CE= 15 V, I_B= 0

V_EB= 14 V, I_C= 0

V_CE= 10 V, I_C= 150 mA

I_C= 500 mA, I_B= 5 mA

µA



I_EBO

0.5

2100

0.4

1.3

h_FE

800

0.7

V_CE(sat)

R₁

1.0

kΩ



Resistance ratio

R₁/R₂

f_T

0.016 0.021 0.025

Transition frequency

V_CB= 20 V, I_E= −20 mA, f = 200 MHz

MHz

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Pulse measurement

Note) The part number in the parenthesis shows conventional part number.

Publication date: January 2004

SJH00032BED

12 3

中文翻译

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与UNR7231|UN7231相关器件

型号	品牌	获取价格	描述	数据表
UNR8231	ETC	获取价格	TRANSISTOR \| 20V V(BR)CEO \| 700MA I(C) \| SC-71
UNR8231(UN8231)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR8231/UNR8231A(UN8231/UN8231A)	ETC	获取价格	UNR8231/UNR8231A (UN8231/UN8231A) - NPN Transistor with built-in Resistor
UNR8231\|UN8231	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR8231A	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 700MA I(C) \| SC-71
UNR8231A(UN8231A)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR8231A\|UN8231A	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR9110	PANASONIC	获取价格	Silicon PNP epitaxial planer transistor
UNR9110G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
UNR9110J	PANASONIC	获取价格	Silicon PNP epitaxial planar type

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