Datasheet > UNR8231A

UNR8231A

更新时间： 2024-11-20 23:39:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
3页	62K
描述
TRANSISTOR \| 50V V(BR)CEO \| 700MA I(C) \| SC-71

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UNR8231A 数据手册

Transistors with built-in Resistor

UNR8231/UNR8231A (UN8231/UN8231A)

Silicon NPN epitaxial planer transistor

Unit: mm

2.5 0.1

1.05

0.05

6.9 0.1

4.0

(1.45)

0.8

For switching

0.7

Features

High forward current transfer ratio h_FE

0.65 max.

Resistor built-in type, allowing downsizing of the equipment and

reduction of the number of parts.

Available in a type with radial taping.

0.45⁺–0⁰.^.0¹5

2.5 0.5 2.5 0.5

Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

Ratings

Unit

1 : Emitter

2 : Collector

3 : Base

UNR8231

UNR8231A

UNR8231

UNR8231A

Collector to

base voltage

V_CBO

MT-2 Type Package

Collector to

emitter voltage

V_CEO

Peak collector current

Collector current

I_CP

I_C

1.5

0.7

Internal Connection

Total power dissipation

Junction temperature

Storage temperature

P_T*

T_j

˚C

(

)

R1 1kΩ

150

T_stg

–55 to +150

47kΩ

* Printed circuit board: Copper foil area of 1cm²or more and thickness of

1.7mm for the collector portion.

(

)

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

V_CB= 15V, I_E= 0

min

typ

max

Unit

Collector cutoff current

Emitter cutoff current

µA

I_CEO

V_CE= 15V, I_B= 0

V_EB= 14V, I_C= 0

I_EBO

0.5

UNR8231

UNR8231A

UNR8231

UNR8231A

Collector to base voltage

Collector to emitter voltage

V_CBO

I_C= 10µA, I_E= 0

V_CEO

h_FE

I_C= 1mA, I_B= 0

Forward current transfer ratio

V_CE= 10V, I_C= 150mA

I_C= 500mA, I_B= 5mA

800

2100

0.4

Collector to emitter saturation voltage V_CE(sat)

Input resistance

R₁

f_T

0.7

1.3

kΩ

Resistance ratio

Transition frequency

R₁/R₂

0.016

0.021

200

0.025

V_CB= 10V, I_E= –50mA, f = 200MHz

MHz

*Pulse measurement

Note.) The Part numbers in the Parenthesis show conventional part number.

12 3

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