是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-F8 | Reach Compliance Code: | unknown |
风险等级: | 5.72 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (ID): | 5 A |
最大漏源导通电阻: | 0.0512 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F8 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 参考标准: | AEC-Q101 |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TPCP8011(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,5A I(D),FP | |
TPCP8011(TE85L,F) | TOSHIBA |
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TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,5A I(D),FP | |
TPCP8012 | TOSHIBA |
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Not Recommended for New Design | |
TPCP8012(TE85L,F) | TOSHIBA |
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TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,8A I(D),TSOP | |
TPCP8013 | TOSHIBA |
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TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,4A I(D),LLCC | |
TPCP8013(TE85L) | TOSHIBA |
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TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,4A I(D),LLCC | |
TPCP8013(TE85L,F) | TOSHIBA |
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TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,4A I(D),LLCC | |
TPCP8101 | TOSHIBA |
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TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) | |
TPCP8101(TE85L,F) | TOSHIBA |
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TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,5.6A I(D),TSOP | |
TPCP8102 | TOSHIBA |
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TOSHIBA Field Effect Transistor Silicon P-Cha |