Datasheet > TPCP8107

TPCP8107

更新时间： 2024-01-29 22:35:30

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
9页	224K
描述
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal

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技术参数
数据手册

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TPCP8107 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Factory Lead Time：	12 weeks
风险等级：	4.68	Base Number Matches：	1

TPCP8107 数据手册

TPCP8107

MOSFETs Silicon P-Channel MOS (U-MOS)

TPCP8107

1. Applications

•

Motor Drivers

•

Mobile Equipment

2. Features

(1) Small, thin package

(2) Small gate charge: QSW = 14.0 nC (typ.)

(3) Low drain-source on-resistance: RDS(ON) = 13.9 mΩ (typ.) (VGS = -10 V)

(4) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)

(5) Enhancement mode: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

PS-8

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

VDSS

VGSS

-40

-20/+10

Drain current (DC)

Drain current (pulsed)

Power dissipation

(Note 1)

(Note 2)

(Note 3)

(Note 4)

-8

-32

IDP

(t = 5 s)

2.01

Single-pulse avalanche energy

Avalanche current

EAS

IAR

Tch

Tstg

145.8

-8

Channel temperature

Storage temperature

(Note 5)

175



-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2013-03

2014-03-10

Rev.3.0

12 3 4 5 6 7...9

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