Datasheet > TPCP8111

TPCP8111

更新时间： 2024-02-07 07:07:18

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
9页	227K
描述
Pch Power MOSFET

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技术参数
数据手册

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TPCP8111 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-F8	Reach Compliance Code：	unknown
风险等级：	5.76	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V	最大漏极电流 (ID)：	3 A
最大漏源导通电阻：	0.1584 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-F8	元件数量：	1
端子数量：	8	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL	参考标准：	AEC-Q101
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

TPCP8111 数据手册

TPCP8111

MOSFETs Silicon P-Channel MOS (U-MOS)

TPCP8111

1. Applications

•

Motor Drivers

•

Mobile Equipment

2. Features

(1) Small, thin package

(2) Small gate charge: QSW = 5.2 nC (typ.)

(3) Low drain-source on-resistance: RDS(ON) = 90 mΩ (typ.) (VGS = -10 V)

(4) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)

(5) Enhancement mode: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

PS-8

4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

-60

-20/+10

-3

(Note 1)

(Note 2)

(Note 3)

(Note 4)

IDP

-12

(t = 5 s)

1.96

Power dissipation

0.94

Single-pulse avalanche energy

Avalanche current

EAS

IAR

31.1

-3

Channel temperature

Storage temperature

(Note 5)

Tch

Tstg

175



-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2013-10-22

Rev.1.0

12 3 4 5 6 7...9

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