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TPCP8103-H(TE85L,F) PDF预览

TPCP8103-H(TE85L,F)

更新时间： 2024-09-23 20:39:31
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 266K
描述
TRANSISTOR,MOSFET,P-CHANNEL,40V V(BR)DSS,4.8A I(D),TSOP

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中文翻译

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TPCP8103-H(TE85L,F) 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：unknown
风险等级：5.82配置：Single
最大漏极电流 (Abs) (ID)：4.8 AFET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：1.68 W
子类别：Other Transistors表面贴装：YES
Base Number Matches：1

TPCP8103-H(TE85L,F) 数据手册

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TPCP8103-H  
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII)  
TPCP8103-H  
High Efficiency DC-DC Converter Applications  
Unit: mm  
Notebook PC Applications  
Portable Equipment Applications  
CCFL Inverter Applications  
0.33±0.05  
A
M
0.05  
5
8
0.475  
1
4
B
•
•
•
•
•
•
•
Small footprint due to a small and thin package  
High speed switching  
B
M
0.05  
0.65  
2.9±0.1  
A
Small gate charge: Q  
= 6.5 nC (typ.)  
0.8±0.05  
SW  
Low drain-source ON-resistance: R  
= 31 mΩ (typ.)  
DS (ON)  
S
0.17±0.02  
0.025  
+0.1  
S
0.28  
-0.11  
High forward transfer admittance: |Y | = 10 S (typ.)  
fs  
+0.13  
-0.12  
Low leakage current: I  
= −10 μA (max) (V  
= −40V)  
DSS  
DS  
1.12  
1.12  
Enhancement mode: V = −0.8 to −2.0 V (V  
= −10 V, I = −1mA)  
D
th  
DS  
+0.13  
-0.12  
+0.1  
-0.11  
0.28  
1. Source 5. Drain  
2. Source 6. Drain  
3. Source 7. Drain  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
4. Gate  
JEDEC  
JEITA  
8. Drain  
―
―
V
−40  
−40  
V
V
V
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
V
±20  
GSS  
TOSHIBA  
2-3V1K  
DC  
(Note 1)  
I
−4.8  
−19.2  
D
Weight: 0.017 g (typ.)  
Drain current  
A
Pulsed (Note 1)  
I
DP  
Circuit Configuration  
Drain power dissipation  
Drain power dissipation  
(t = 5 s)  
(Note 2a)  
(t = 5 s)  
P
1.68  
0.84  
W
W
D
D
8
7
5
6
P
(Note 2b)  
Single-pulse avalanche energy  
(Note 3)  
E
10.7  
−4.8  
0.09  
mJ  
A
AS  
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
mJ  
AR  
(Note 4)  
1
2
4
3
T
T
150  
°C  
°C  
Channel temperature  
ch  
−55 to 150  
Storage temperature range  
stg  
Marking (Note 5)  
8
7
6
5
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.)  
are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
8103H  
※
1
2
3
4
This transistor is an electrostatic-sensitive device. Handle with care.  
Lot No.  
1
2009-12-10  
1234567

中文翻译

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