Datasheet > TPCP8106

TPCP8106

更新时间： 2024-02-22 17:24:43

品牌	Logo	应用领域
东芝 - TOSHIBA		电池开关电脑 PC
页数	文件大小	规格书
9页	230K
描述
Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs

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技术参数
数据手册

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TPCP8106 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
包装说明：	SMALL OUTLINE, R-PDSO-F8	Reach Compliance Code：	unknown
风险等级：	5.74	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V	最大漏极电流 (ID)：	5.2 A
最大漏源导通电阻：	0.044 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-F8	元件数量：	1
端子数量：	8	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

TPCP8106 数据手册

TPCP8106

MOSFETs Silicon P-Channel MOS (U-MOS)

TPCP8106

1. Applications

•

Lithium-Ion Secondary Batteries

Power Management Switches

Notebook PCs

2. Features

(1) Small footprint due to a small and thin package

(2) Low drain-source on-resistance: RDS(ON) = 25 mΩ (typ.) (VGS = -10 V)

(3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V)

(4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

PS-8

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

-30

-25/+20

-5.2

(Note 1)

(Note 2)

(Note 3)

(Note 4)

IDP

-20.8

1.68

(t = 5 s)

Power dissipation

0.84

Single-pulse avalanche energy

Avalanche current

EAS

IAR

7.0

-5.2

Channel temperature

Storage temperature

Tch

Tstg

150



-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2011-07-04

Rev.1.0

12 3 4 5 6 7...9

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