Datasheet > TPCP8105(TE85L,F)

TPCP8105(TE85L,F)

更新时间： 2024-02-20 22:13:07

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	230K
描述
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,7.2A I(D),FP

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TPCP8105(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.61	配置：	Single
最大漏极电流 (Abs) (ID)：	7.2 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	1.68 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

TPCP8105(TE85L,F) 数据手册

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TPCP8105

MOSFETs Silicon P-Channel MOS (U-MOS)

TPCP8105

1. Applications

•

Lithium-Ion Secondary Batteries

Power Management Switches

Notebook PCs

2. Features

(1) Small, thin package

(2) Low drain-source on-resistance: RDS(ON) = 13.8 mΩ (typ.) (VGS = -4.5 V)

(3) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V)

(4) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

PS-8

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

VDSS

VGSS

-20

±12

Drain current (DC)

Drain current (pulsed)

Power dissipation

(Note 1)

(Note 2)

(Note 3)

(Note 4)

IDP

EAS

IAR

-7.2

-28.8

1.68

0.84

33.0

-7.2

(t = 5 s)

Single-pulse avalanche energy

Avalanche current

Channel temperature

Storage temperature

Tch

150



Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2012-09-26

Rev.2.0

12 3 4 5 6 7...9

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