Datasheet > TPCP8110

TPCP8110

更新时间： 2024-03-25 22:01:57

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	256K
描述
Not Recommended for New Design

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TPCP8110 数据手册

TPCP8110

MOSFETs Silicon P-Channel MOS (U-MOS)

TPCP8110

1. Applications

•

Motor Drivers

•

Mobile Equipment

2. Features

(1) AEC-Q101 qualified

(2) Small, thin package

(3) Small gate charge: QSW = 14 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 30.4 mΩ (typ.) (VGS = -10 V)

(5) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)

(6) Enhancement mode: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

PS-8

Start of commercial production

2013-01

2016-02-23

Rev.3.0

12 3 4 5 6 7...9

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