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TPCP8110 PDF预览

TPCP8110

更新时间: 2024-11-06 14:56:07
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 256K
描述
Not Recommended for New Design

TPCP8110 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F8Reach Compliance Code:unknown
风险等级:5.76配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):5 A
最大漏源导通电阻:0.0532 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL参考标准:AEC-Q101
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TPCP8110 数据手册

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TPCP8110  
MOSFETs Silicon P-Channel MOS (U-MOS)  
TPCP8110  
1. Applications  
Motor Drivers  
Mobile Equipment  
2. Features  
(1) AEC-Q101 qualified  
(2) Small, thin package  
(3) Small gate charge: QSW = 14 nC (typ.)  
(4) Low drain-source on-resistance: RDS(ON) = 30.4 m(typ.) (VGS = -10 V)  
(5) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)  
(6) Enhancement mode: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA)  
3. Packaging and Internal Circuit  
1, 2, 3: Source  
4: Gate  
5, 6, 7, 8: Drain  
PS-8  
Start of commercial production  
2013-01  
©2016 Toshiba Corporation  
2016-02-23  
Rev.3.0  
1

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