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TPCP8103-H PDF预览

TPCP8103-H

更新时间： 2024-02-02 12:51:24
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
4页 213K
描述
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra High speed U-MOSIII)

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TPCP8103-H 技术参数

生命周期：Not Recommended包装说明：SMALL OUTLINE, R-PDSO-F8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.35
Samacsys Confidence：4Samacsys Status：Released
2D Presentation：https://componentsearchengine.com/2D/0T/1604187.1.1.pngSchematic Symbol：https://componentsearchengine.com/symbol.php?partID=1604187
PCB Footprint：https://componentsearchengine.com/footprint.php?partID=16041873D View：https://componentsearchengine.com/viewer/3D.php?partID=1604187
Samacsys PartID：1604187Samacsys Image：https://componentsearchengine.com/Images/9/TPCP8103-H.jpg
Samacsys Thumbnail Image：https://componentsearchengine.com/Thumbnails/1/TPCP8103-H.jpgSamacsys Pin Count：8
Samacsys Part Category：MOSFET (P-Channel)Samacsys Package Category：SO Transistor Flat Lead
Samacsys Footprint Name：2-3V1KSamacsys Released Date：2018-11-23 00:22:10
Is Samacsys：N配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：40 V最大漏极电流 (ID)：4.8 A
最大漏源导通电阻：0.054 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-F8元件数量：1
端子数量：8工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：P-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

TPCP8103-H 数据手册

 浏览型号TPCP8103-H的Datasheet PDF文件第2页浏览型号TPCP8103-H的Datasheet PDF文件第3页浏览型号TPCP8103-H的Datasheet PDF文件第4页 
TPCP8103-H  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra High speed U-MOSIII)  
TPCP8103-H  
High Efficiency DC／DC Converter Applications  
Unit: mm  
Notebook PC Applications  
Portable Equipment Applications  
CCFL Inverter Applications  
0.33±0.05  
A
M
0.05  
5
8
0.475  
1
4
B
•
•
•
•
•
•
•
Small footprint due to a small and thin package  
High speed switching  
B
M
0.05  
0.65  
2.9±0.1  
A
Small gate charge: Q  
= 6.5 nC (typ.)  
SW  
0.8±0.05  
Low drain-source ON-resistance: R  
= 31 mΩ (typ.)  
DS (ON)  
S
0.025  
+0.1  
S
0.28  
0.17±0.02  
-0.11  
High forward transfer admittance: |Y | = 10 S (typ.)  
fs  
Low leakage current: I  
= 10 μA (max) (V  
= -40V)  
+0.13  
-0.12  
DSS  
DS  
1.12  
1.12  
Enhancement mode: V = -0.8 to -2.0 V (V  
= -10 V, I = -1mA)  
D
th  
DS  
+0.13  
-0.12  
+0.1  
-0.11  
0.28  
1．Source  
2．Source  
3．Source  
4．Gate  
5．Drain  
6．Drain  
7．Drain  
8．Drain  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
JEDEC  
JEITA  
―
―
V
-40  
-40  
V
V
V
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
V
±20  
-4.8  
-19.2  
GSS  
TOSHIBA  
2-3V1K  
DC  
(Note 1)  
I
D
Weight: 0.017 g (typ.)  
Drain current  
A
Pulsed (Note 1)  
I
DP  
Circuit Configuration  
Drain power dissipation  
Drain power dissipation  
(t = 5 s)  
(Note 2a)  
(t = 5 s)  
P
1.68  
0.84  
W
W
D
D
8
7
5
6
P
(Note 2b)  
Single-pulse avalanche energy  
(Note 3)  
E
10.7  
-4.8  
0.09  
mJ  
A
AS  
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
mJ  
AR  
(Tc=25℃) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
2
1
4
3
−55 to 150  
Storage temperature range  
stg  
8
7
6
5
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.)  
are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
8103H  
※
1
2
3
4
This transistor is an electrostatic-sensitive device. Handle with care.  
Lot No.  
1
2007-06-22  
1234

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