TPCP8103-H
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII)
TPCP8103-H
High Efficiency DC-DC Converter Applications
Unit: mm
Notebook PC Applications
Portable Equipment Applications
CCFL Inverter Applications
0.33±0.05
A
M
0.05
5
8
0.475
1
4
B
•
•
•
•
•
•
•
Small footprint due to a small and thin package
High speed switching
B
M
0.05
0.65
2.9±0.1
A
Small gate charge: Q
= 6.5 nC (typ.)
0.8±0.05
SW
Low drain-source ON-resistance: R
= 31 mΩ (typ.)
DS (ON)
S
0.17±0.02
0.025
+0.1
S
0.28
-0.11
High forward transfer admittance: |Y | = 10 S (typ.)
fs
+0.13
-0.12
Low leakage current: I
= −10 μA (max) (V
= −40V)
DSS
DS
1.12
1.12
Enhancement mode: V = −0.8 to −2.0 V (V
= −10 V, I = −1mA)
D
th
DS
+0.13
-0.12
+0.1
-0.11
0.28
1. Source 5. Drain
2. Source 6. Drain
3. Source 7. Drain
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Symbol
Rating
Unit
4. Gate
JEDEC
JEITA
8. Drain
―
―
V
−40
−40
V
V
V
DSS
V
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
DGR
GS
V
±20
GSS
TOSHIBA
2-3V1K
DC
(Note 1)
I
−4.8
−19.2
D
Weight: 0.017 g (typ.)
Drain current
A
Pulsed (Note 1)
I
DP
Circuit Configuration
Drain power dissipation
Drain power dissipation
(t = 5 s)
(Note 2a)
(t = 5 s)
P
1.68
0.84
W
W
D
D
8
7
5
6
P
(Note 2b)
Single-pulse avalanche energy
(Note 3)
E
10.7
−4.8
0.09
mJ
A
AS
Avalanche current
I
AR
Repetitive avalanche energy
E
mJ
AR
(Note 4)
1
2
4
3
T
T
150
°C
°C
Channel temperature
ch
−55 to 150
Storage temperature range
stg
Marking (Note 5)
8
7
6
5
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
8103H
※
1
2
3
4
This transistor is an electrostatic-sensitive device. Handle with care.
Lot No.
1
2009-12-10