Datasheet > TPCP8102(TE85L,F)

TPCP8102(TE85L,F)

更新时间： 2024-01-11 11:16:25

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	175K
描述
MOSFET P-CH 20V 7.3A PS-8

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TPCP8102(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.54	Base Number Matches：	1

TPCP8102(TE85L,F) 数据手册

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TPCP8102

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS Ⅳ)

TPCP8102

Notebook PC Applications

Unit: mm

Portable Equipment Applications

0.33±0.05

0.05

•

Small footprint due to small and thin package

Low drain-source ON-resistance: R = 13.5 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 24 S (typ.)

Low leakage current: I

= -10 μA (max) (V

= -20 V)

DSS

0.475

0.05

0.65

Enhancement model: V = -0.45 to -1.2 V

2.9±0.1

= -10 V, I = -200 μA)

0.8±0.05

0.025

+0.1

-0.11

0.28

Absolute Maximum Ratings (Ta = 25°C)

0.17±0.02

+0.13

-0.12

1.12

Characteristic

Drain-source voltage

Symbol

Rating

Unit

+0.13

-0.12

-20

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

+0.1

-0.11

DGR

0.28

1. Source

2. Source

3. Source

4. Gate

5. Drain

6. Drain

7. Drain

8. Drain

± 12

-7.2

-28.8

GSS

(Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation

(t = 5 s)

1.68

0.84

JEDEC

JEITA

⎯

(Note 2a)

⎯

(t = 5 s)

(Note 2b)

TOSHIBA

2-3V1K

33.7

-7.2

Single-pulse avalanche energy(Note 3)

Avalanche current

Weight: 0.017 g (typ.)

0.168

150

Repetitive avalanche energy (Note 4)

Channel temperature

°C

-55~150

Storage temperature range

stg

Note: For Notes 1 to 5, refer to the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

Circuit Configuration

Marking (Note 5)

8102

※

Lot No.

2006-11-17

12 3 4 5 6 7

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