Datasheet > TPCP8013

TPCP8013

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	227K
描述
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,4A I(D),LLCC

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TPCP8013 数据手册

TPCP8013

Power MOSFETs Silicon N-channel MOS (U-MOS)

TPCP8013

1. Applications

•

Motor Drivers

•

Mobile Equipment

2. Features

(1) Small, thin package

(2) Small gate charge : QSW = 4.5 nC (typ.)

(3) Low drain-source on-resistance: RDS(ON) = 41.5 mΩ (typ.) (VGS = 10 V)

(4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

(5) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA)

3. Packaging and Internal Circuit

1,2, 3: Source

4: Gate

5, 6, 7, 8: Drain

PS-8

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

±20

(Note 1)

(Note 2)

(Note 3)

(Note 4)

IDP

(t = 5 s)

1.96

0.94

29.2

Power dissipation

Single-pulse avalanche energy

Avalanche current

EAS

IAR

Channel temperature

Storage temperature

(Note 5)

Tch

Tstg

175



-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2012-12-14

Rev.2.0

12 3 4 5 6 7...9

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