Datasheet > TPCP8010(TE85L)

TPCP8010(TE85L)

更新时间： 2024-02-24 18:14:22

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	236K
描述
TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,6A I(D),TSOP

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TPCP8010(TE85L) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	6 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	1.96 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

TPCP8010(TE85L) 数据手册

TPCP8010

6. Electrical Characteristics

6.1. Static Characteristics (Ta = 25 unless otherwise specified)

Characteristics

Gate leakage current

Symbol

Test Condition

Min

Typ.

Max

Unit

IGSS

IDSS

VGS = ±16 V, VDS = 0 V



±10

µA

Drain cut-off current

VDS = 40 V, VGS = 0 V

Drain-source breakdown voltage

V(BR)DSS

V(BR)DSX

ID = 10 mA, VGS = 0 V

ID = 10 mA, VGS = -20 V



Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

2.5

Drain-source on-resistance

RDS(ON)

VGS = 6 V, ID = 3 A

VGS = 10 V, ID = 3 A



31.2

24.8

mΩ

19.1

6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)

Characteristics

Input capacitance

Symbol

Test Condition

Min

Typ.

Max

Unit

Ciss

Crss

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz



600



Reverse transfer capacitance

Output capacitance

132

5.2

Switching time (rise time)

Switching time (turn-on time)

Switching time (fall time)

Switching time (turn-off time)

See Figure 6.2.1

ton

5.0

toff

Fig. 6.2.1 Switching Time Test Circuit

6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Test Condition

Min

Typ.

13.1

Max

Unit

Total gate charge (gate-source plus

gate-drain)

VDD ≈ 32 V, VGS = 10 V, ID = 6 A



Gate-source charge 1

Gate-drain charge

Gate switch charge

Qgs1

Qgd



2.4

4.1

4.9



QSW

6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Reverse drain current (pulsed)

Diode forward voltage

(Note 6)

IDRP



VDSF

IDR = 6 A, VGS = 0 V

-1.2

Note 6: Ensure that the channel temperature does not exceed 175.

2012-09-28

Rev.2.0

1 234 5 6 7...9

下载PDF

与TPCP8010(TE85L)相关器件

型号	品牌	描述	获取价格	数据表
TPCP8010(TE85L,F)	TOSHIBA	TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,6A I(D),TSOP	获取价格
TPCP8011	TOSHIBA	TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal	获取价格
TPCP8011(TE85L)	TOSHIBA	TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,5A I(D),FP	获取价格
TPCP8011(TE85L,F)	TOSHIBA	TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,5A I(D),FP	获取价格
TPCP8012	TOSHIBA	Not Recommended for New Design	获取价格
TPCP8012(TE85L,F)	TOSHIBA	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,8A I(D),TSOP	获取价格