Datasheet > TPC8085(TE12L,Q)

TPC8085(TE12L,Q)

更新时间： 2024-11-02 19:48:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	221K
描述
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,18A I(D),SO

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TPC8085(TE12L,Q) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.76	配置：	Single
最大漏极电流 (Abs) (ID)：	18 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	1.9 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

TPC8085(TE12L,Q) 数据手册

TPC8085

MOSFETs Silicon N-Channel MOS (U-MOS)

TPC8085

1. Applications

•

Lithium-Ion Secondary Batteries

Power Management Switches

Notebook PCs

2. Features

(1) Small footprint due to a small and thin package

(2) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 10 V)

(3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)

(4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

SOP-8

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

±20

(Note 1)

(Note 2)

(Note 3)

(Note 4)

IDP

(t = 10 s)

1.9

Power dissipation

1.0

Single-pulse avalanche energy

Avalanche current

EAS

IAR

210

Channel temperature

Storage temperature

Tch

Tstg

150



-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-07-16

Rev.1.0

12 3 4 5 6 7...9

中文翻译

下载PDF

与TPC8085(TE12L,Q)相关器件

型号	品牌	获取价格	描述	数据表
TPC8086	TOSHIBA	获取价格	Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs
TPC8087	TOSHIBA	获取价格	Notebook PCs Mobile Handsets
TPC8089-H	TOSHIBA	获取价格	EOL announced
TPC8101	TOSHIBA	获取价格	TPC8101
TPC8102	FUJITSU	获取价格	2-ch DC/DC Converter IC
TPC8102	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (MOSVI)
TPC8103	TOSHIBA	获取价格	TRANSISTOR SILICON P CHANNEL MOS TYPE
TPC8103(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,11A I(D),SO
TPC8104-H	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TPC8105-H	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)