Datasheet > TPC8109_06

TPC8109_06

更新时间： 2024-01-25 14:22:54

品牌	Logo	应用领域
东芝 - TOSHIBA		电池电脑便携式便携式设备 PC
页数	文件大小	规格书
7页	244K
描述
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

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中文翻译

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TPC8109_06 数据手册

TPC8109

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

TPC8109

Lithium Ion Battery Applications

Unit: mm

Notebook PC Applications

Portable Equipment Applications

•

Small footprint due to small and thin package

Low drain-source ON resistance: R = 14 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 19 S (typ.)

= −10 µA (max) (V

Low leakage current: I

= −30 V)

DSS

Enhancement mode: V = −0.8 to −2.0 V (V

= −10 V, I = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−30

±20

−10

−40

DSS

JEDEC

JEITA

―

DGR

Drain-gate voltage (R

= 20 kΩ)

Gate-source voltage

GSS

TOSHIBA

2-6J1B

(Note 1)

Drain current

Pulse (Note 1)

Weight: 0.080 g (typ.)

Drain power dissipation

(t = 10 s)

(Note 2a)

(t = 10 s)

(Note 2b)

1.9

1.0

Circuit Configuration

Single pulse avalanche energy

(Note 3)

130

−10

0.19

Avalanche current

Repetitive avalanche energy

(Note 2a) (Note 4)

150

°C

Channel temperature

−55 to 150

Storage temperature range

stg

Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.

2006-11-16

12 3 4 5 6 7

中文翻译

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与TPC8109_06相关器件

型号	品牌	获取价格	描述	数据表
TPC8110	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPC8110(TE12L)	TOSHIBA	获取价格	Small Signal Field-Effect Transistor
TPC8110_06	TOSHIBA	获取价格	Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
TPC8111	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPC8111(T2LIBM2,Q)	TOSHIBA	获取价格	TRANSISTOR 11000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, THIN, 2-6J1B, 8 PIN, FET G
TPC8111(TE12L)	TOSHIBA	获取价格	Small Signal Field-Effect Transistor
TPC8111(TE12L,Q,M)	TOSHIBA	获取价格	TRANSISTOR 11000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, THIN, 2-6J1B, 8 PIN, FET G
TPC8111_06	TOSHIBA	获取价格	Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
TPC8112	TOSHIBA	获取价格	Field Effect Transistor Silicon P Channel MOS Type(U-MOS III)
TPC8112(TE12L,Q)	TOSHIBA	获取价格	MOSFET P-CH 30V 13A SOP8 2-6J1B

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