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TPC8111(T2LIBM2,Q)

更新时间： 2024-01-08 18:04:06
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
7页 245K
描述
TRANSISTOR 11000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, THIN, 2-6J1B, 8 PIN, FET General Purpose Small Signal

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TPC8111(T2LIBM2,Q) 技术参数

生命周期：End Of Life包装说明：SMALL OUTLINE, R-PDSO-G8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.67
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：11 A最大漏源导通电阻：0.018 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
元件数量：1端子数量：8
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：P-CHANNEL表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

TPC8111(T2LIBM2,Q) 数据手册

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TPC8111  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)  
TPC8111  
Lithium Ion Battery Applications  
Unit: mm  
Notebook PC Applications  
Portable Equipment Applications  
•
•
•
•
•
Small footprint due to small and thin package  
Low drain-source ON resistance: R = 8.1 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 23 S (typ.)  
fs  
Low leakage current: I  
= −10 μA (max) (V  
= −30 V)  
DSS  
DS  
Enhancement mode: V = −0.8 to −2.0 V (V  
= −10 V, I = −1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
JEDEC  
JEITA  
―
―
V
−30  
−30  
±20  
−11  
−44  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
TOSHIBA  
2-6J1B  
V
GSS  
Weight: 0.080 g (typ.)  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
DP  
Drain power dissipation (t = 10 s)  
(Note 2a)  
P
1.9  
1.0  
W
W
Circuit Configuration  
D
D
Drain power dissipation (t = 10 s)  
(Note 2b)  
8
7
6
5
P
Single pulse avalanche energy  
(Note 3)  
E
31.5  
−11  
mJ  
A
AS  
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
0.19  
mJ  
AR  
(Note 2a) (Note 4)  
Channel temperature  
T
150  
°C  
°C  
ch  
1
2
3
4
Storage temperature range  
T
−55 to 150  
stg  
Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2009-09-29  
1234567

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