是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | LEAD FREE, 2-6J1B, 8 PIN | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.66 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 11 A |
最大漏极电流 (ID): | 11 A | 最大漏源导通电阻: | 0.018 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 1.9 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TPC8111(T2LIBM2,Q) | TOSHIBA |
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TRANSISTOR 11000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, THIN, 2-6J1B, 8 PIN, FET G |
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TPC8111(TE12L,Q,M) | TOSHIBA |
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TRANSISTOR 11000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, THIN, 2-6J1B, 8 PIN, FET G |
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TPC8112_06 | TOSHIBA |
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TPC8113 | TOSHIBA |
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) |
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TPC8113_06 | TOSHIBA |
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TPC8114 | TOSHIBA |
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV) |
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