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TPC8089-H PDF预览

TPC8089-H

更新时间: 2024-11-03 14:56:15
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 281K
描述
EOL announced

TPC8089-H 数据手册

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TPC8089-H  
MOSFETs Silicon N-Channel MOS (U-MOS-H)  
TPC8089-H  
1. Applications  
Switching Voltage Regulators  
Motor Drivers  
DC-DC Converters  
2. Features  
(1) High-speed switching  
(2) Small gate charge: QSW = 3.6 nC (typ.)  
(3) Low drain-source on-resistance: RDS(ON) = 28 m(typ.) (VGS = 4.5 V)  
(4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)  
(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)  
3. Packaging and Internal Circuit  
1, 2, 3: Source  
4: Gate  
5, 6, 7, 8: Drain  
SOP-8  
2013-04-04  
Rev.1.0  
1

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