Datasheet > TPC8089-H

TPC8089-H

更新时间： 2024-04-18 10:34:06

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

TPC8089-H 数据手册

TPC8089-H

MOSFETs Silicon N-Channel MOS (U-MOS-H)

TPC8089-H

1. Applications

•

Switching Voltage Regulators

Motor Drivers

DC-DC Converters

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 3.6 nC (typ.)

(3) Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ.) (VGS = 4.5 V)

(4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)

(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

SOP-8

2013-04-04

Rev.1.0

12 3 4 5 6 7...9

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
TPC8101	TOSHIBA	获取价格	TPC8101
TPC8102	FUJITSU	获取价格	2-ch DC/DC Converter IC
TPC8102	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (MOSVI)
TPC8103	TOSHIBA	获取价格	TRANSISTOR SILICON P CHANNEL MOS TYPE
TPC8103(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,11A I(D),SO
TPC8104-H	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TPC8105-H	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TPC8106-H	TOSHIBA	获取价格	SILICON P CHANNEL MOS TYPE
TPC8107	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
TPC8107	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C