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TPC8087 PDF预览

TPC8087

更新时间: 2024-09-30 12:18:59
品牌 Logo 应用领域
东芝 - TOSHIBA 电脑手机PC
页数 文件大小 规格书
9页 226K
描述
Notebook PCs Mobile Handsets

TPC8087 技术参数

生命周期:End Of Life零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.74配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):18 A
最大漏源导通电阻:0.0025 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TPC8087 数据手册

 浏览型号TPC8087的Datasheet PDF文件第2页浏览型号TPC8087的Datasheet PDF文件第3页浏览型号TPC8087的Datasheet PDF文件第4页浏览型号TPC8087的Datasheet PDF文件第5页浏览型号TPC8087的Datasheet PDF文件第6页浏览型号TPC8087的Datasheet PDF文件第7页 
TPC8087  
MOSFETs Silicon N-Channel MOS (U-MOS)  
TPC8087  
1. Applications  
Notebook PCs  
Mobile Handsets  
2. Features  
(1) Small footprint due to a small and thin package  
(2) Low drain-source on-resistance: RDS(ON) = 1.7 m(typ.) (VGS = 10 V)  
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)  
(4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA)  
3. Packaging and Internal Circuit  
1, 2, 3: Source  
4: Gate  
5, 6, 7, 8: Drain  
SOP-8  
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)  
Characteristics  
Symbol  
Rating  
Unit  
V
Drain-source voltage  
Gate-source voltage  
Drain current (DC)  
Drain current (pulsed)  
Power dissipation  
VDSS  
VGSS  
ID  
30  
±20  
(Note 1)  
(Note 1)  
(Note 2)  
(Note 3)  
(Note 4)  
18  
A
IDP  
72  
(t = 10 s)  
(t = 10 s)  
PD  
1.9  
W
W
mJ  
A
Power dissipation  
PD  
1.0  
Single-pulse avalanche energy  
Avalanche current  
EAS  
IAR  
842  
18  
Channel temperature  
Storage temperature  
Tch  
Tstg  
150  
-55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
2010-07-26  
Rev.1.0  
1

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