TPC8106-H

更新时间： 2024-02-24 20:23:10

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	514K
描述
SILICON P CHANNEL MOS TYPE

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中文翻译

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数据手册

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TPC8106-H 数据手册

TPC8106-H

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)

TPC8106−H

High Speed and High Efficiency DC−DC Converters

Lithium Ion Battery Applications

Notebook PC Applications

Unit: mm

Portable Equipment Applications

ꢀ Small footprint due to small and thin package

ꢀ High speed switching

ꢀ Small gate charge

ꢀ Low drain−source ON resistance

ꢀ High forward transfer admittance : |Y | = 16.6 S (typ.)

ꢀ Low leakage current : I

: Qg = 52 nC (typ.)

: R = 14 mΩ (typ.)

DS (ON)

= −10 µA (max) (V

= −30 V)

=− 10 V, I = −1 mA)

DSS

ꢀ Enhancement−mode : V = −0.8~ −2.0 V (V

Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−30

±20

−10

−40

DSS

JEDEC

JEITA

―

Drain-gate voltage (R

= 20 kΩ)

DGR

Gate-source voltage

GSS

TOSHIBA

2-6J1B

(Note 1)

Drain current

Weight: 0.080 g (typ.)

Pulse (Note 1)

Drain power dissipation

(t = 10 s)

(Note 2a)

2.4

1.0

(t = 10 s)

(Note 2b)

Circuit Configuration

Single pulse avalanche energy

(Note 3)

130

−10

0.24

Avalanche current

Repetitive avalanche energy

(Note 2a) (Note 4)

150

°C

Channel temperature

−55 to 150

Storage temperature range

stg

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the

next page.

This transistor is an electrostatic sensitive device. Please handle with

caution.

2002-02-06

12 3 4 5 6 7

中文翻译

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