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TPC6002 PDF预览

TPC6002

更新时间: 2024-02-21 03:24:32
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号场效应晶体管光电二极管
页数 文件大小 规格书
6页 157K
描述
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

TPC6002 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:2-3T1A, 6 PIN针数:6
Reach Compliance Code:unknown风险等级:5.8
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):6 A最大漏源导通电阻:0.05 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

TPC6002 数据手册

 浏览型号TPC6002的Datasheet PDF文件第2页浏览型号TPC6002的Datasheet PDF文件第3页浏览型号TPC6002的Datasheet PDF文件第4页浏览型号TPC6002的Datasheet PDF文件第5页浏览型号TPC6002的Datasheet PDF文件第6页 
                                                        
                                                        
TPC6002  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)  
TPC6002  
Notebook PC Applications  
Portable Equipment Applications  
Unit: mm  
·
·
·
·
Low drain-source ON resistance: R  
= 25 m(typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 10 S (typ.)  
fs  
= 10 µA (max) (V  
Low leakage current: I  
= 30 V)  
DSS  
DS  
Enhancement-model: V = 1.3 to 2.5 V (V  
= 10 V, I = 1 mA)  
th DS  
D
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
V
30  
30  
V
V
V
DSS  
DGR  
GSS  
Drain-gate voltage (R  
= 20 kW)  
V
V
GS  
Gate-source voltage  
±20  
DC  
I
6
D
(Note 1)  
Pulse  
(Note 1)  
Drain current  
A
I
24  
2.2  
0.7  
DP  
JEDEC  
JEITA  
Drain power dissipation  
Drain power dissipation  
(t = 5 s)  
(Note 2a)  
(t = 5 s)  
P
W
W
D
D
TOSHIBA  
2-3T1A  
Weight: 0.011 g (typ.)  
P
(Note 2b)  
Single pulse avalanche energy (Note 3)  
Avalanche current  
E
5.8  
3
mJ  
A
AS  
I
Circuit Configuration  
AR  
Repetitive avalanche energy (Note 4)  
Channel temperature  
E
0.22  
mJ  
°C  
°C  
AR  
6
5
4
3
T
150  
ch  
Storage temperature range  
T
-55 to 150  
stg  
Thermal Characteristics  
1
2
Characteristics  
Symbol  
Max  
56.8  
Unit  
Thermal resistance, channel to ambient  
Marking (Note 5)  
R
°C/W  
th (ch-a)  
(t = 5 s)  
Thermal resistance, channel to ambient  
(t = 5 s) (Note 2b)  
(Note 2a)  
R
178.5  
°C/W  
th (ch-a)  
S 2 B  
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next  
page.  
This transistor is an electrostatically sensitive device. Please handle it  
with caution.  
1
2001-11-07  

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