Datasheet > TPC6009-H(TE85L,FM

TPC6009-H(TE85L,FM

更新时间： 2024-02-23 21:20:57

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	230K
描述
Trans MOSFET N-CH 40V 5.3A 6-Pin VS T/R

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TPC6009-H(TE85L,FM 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Factory Lead Time：	16 weeks
风险等级：	5.7	Base Number Matches：	1

TPC6009-H(TE85L,FM 数据手册

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TPC6009-H

MOSFETs Silicon N-Channel MOS (U-MOS-H)

TPC6009-H

1. Applications

•

High-Efficiency DC-DC Converters

Notebook PCs

Mobile Handsets

2. Features

(1) Small, thin package

(2) High-speed switching

(3) Small gate charge: QSW = 1.0 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 66 mΩ (typ.) (VGS = 4.5 V)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)

(6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)

3. Packaging and Internal Circuit

1, 2, 5, 6: Drain

3: Gate

4: Source

VS-6

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

±20

(Note 1)

(Note 2)

(Note 3)

(Note 4)

5.3

IDP

21.2

2.2

(t = 5 s)

Power dissipation

0.7

Single-pulse avalanche energy

Avalanche current

EAS

IAR

5.21

5.3

Channel temperature

Storage temperature

Tch

Tstg

150



-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2010-02

2014-02-14

Rev.2.0

12 3 4 5 6 7...9

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