Datasheet > TPC6104_06

TPC6104_06

更新时间： 2024-01-24 16:18:07

品牌	Logo	应用领域
东芝 - TOSHIBA		电脑便携式便携式设备 PC
页数	文件大小	规格书
7页	235K
描述
Notebook PC Applications Portable Equipment Applications

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TPC6104_06 数据手册

TPC6104

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

TPC6104

Notebook PC Applications

Portable Equipment Applications

Unit: mm

•

Low drain-source ON resistance: R

= 33 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 12 S (typ.)

Low leakage current: I

= −10 µA (max) (V

= −20 V)

DSS

Enhancement mode: V = −0.5 to −1.2 V

= −10 V, I = −200 µA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−20

±8

DSS

Drain-gate voltage (R

= 20 kΩ)

DGR

Gate-source voltage

GSS

−5.5

−22

(Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation

(t = 5 s)

2.2

0.7

(Note 2a)

JEDEC

JEITA

―

(t = 5 s)

(Note 2b)

TOSHIBA

2-3T1A

Single pulse avalanche energy(Note 3)

Avalanche current

4.9

−2.75

0.22

Weight: 0.011 g (typ.)

Repetitive avalanche energy (Note 4)

Channel temperature

°C

150

−55~150

Storage temperature range

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Circuit Configuration

Characteristics

Symbol

Max

56.8

Unit

Thermal resistance, channel to ambient (t = 5 s)

°C/W

th (ch-a)

(Note 2a)

Thermal resistance, channel to ambient (t = 5 s)

(Note 2b)

178.5 °C/W

Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

2006-11-16

12 3 4 5 6 7

中文翻译

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