TPC6113

更新时间： 2024-02-28 06:16:22

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体电池开关小信号场效应晶体管光电二极管
页数	文件大小	规格书
7页	212K
描述
Lithium Ion Battery Applications Power Management Switch Applications

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技术参数
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TPC6113 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.69
Base Number Matches：	1

TPC6113 数据手册

TPC6113

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)

TPC6113

Lithium Ion Battery Applications

Power Management Switch Applications

Unit: mm

•

Small footprint due to small and thin package

Low drain-source ON-resistance: R

= 38 mΩ (typ.)

DS (ON)

( V

= −4.5V)

•

Low leakage current: I

= −10 μA (max) (V

= −20 V)

DSS

Enhancement mode: V = −0.5 to −1.2 V

= −10 V, I = −0.2 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−20

±12

−5

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Drain current

−20

Pulse (Note 1)

JEDEC

JEITA

―

Drain power dissipation

(t = 5 s)

2.2

0.7

(Note 2a)

(t = 5 s)

(Note 2b)

TOSHIBA

2-3T1A

1.6

−2.5

150

Single pulse avalanche energy(Note 3)

Avalanche current

Weight: 0.011 g (typ.)

Channel temperature

°C

−55 to 150

Storage temperature range

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Circuit Configuration

Characteristics

Symbol

Max

56.8

Unit

Thermal resistance, channel to ambient (t = 5 s)

°C/W

th (ch-a)

(Note 2a)

Thermal resistance, channel to ambient (t = 5 s)

(Note 2b)

178.5 °C/W

Note: (Note 1), (Note 2), (Note 3) : See other pages.

This transistor is an electrostatic-sensitive device. Please handle with caution.

2009-12-26

12 3 4 5 6 7

中文翻译

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