品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | ![]() |
/ |
页数 | 文件大小 | 规格书 |
1页 | 111K | ![]() |
描述 | ||
SINGLE UNIDIRECTIONAL BREAKOVER DIODE,82V V(BO) MAX,300MA I(S),TO-220 |
是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | not_compliant | 风险等级: | 5.92 |
Is Samacsys: | N | 最大转折电压: | 82 V |
最大维持电流: | 180 mA | JESD-609代码: | e0 |
最高工作温度: | 70 °C | 最低工作温度: | |
重复峰值反向电压: | 56 V | 子类别: | Breakover Diodes |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TPC62B12 | STMICROELECTRONICS |
获取价格 |
SINGLE UNIDIRECTIONAL BREAKOVER DIODE,75V V(BO) MAX,300MA I(S),TO-220 |
![]() |
TPC62B18 | STMICROELECTRONICS |
获取价格 |
SINGLE UNIDIRECTIONAL BREAKOVER DIODE,75V V(BO) MAX,300MA I(S),TO-220 |
![]() |
TPC6501 | TOSHIBA |
获取价格 |
Silicon NPN Epitaxial Type |
![]() |
TPC6501_06 | TOSHIBA |
获取价格 |
Transistor Silicon NPN Epitaxial Type |
![]() |
TPC6502 | TOSHIBA |
获取价格 |
Transistor Silicon NPN Epitaxial Type |
![]() |
TPC6502(TE85L) | TOSHIBA |
获取价格 |
TPC6502(TE85L) |
![]() |
TPC6502(TE85L,F) | TOSHIBA |
获取价格 |
Trans GP BJT NPN 50V 3A 6-Pin VS T/R |
![]() |
TPC6503 | TOSHIBA |
获取价格 |
Transistor Silicon NPN Epitaxial Type |
![]() |
TPC6503(TE85L) | TOSHIBA |
获取价格 |
Trans Digital BJT NPN 20V 1.5mA 6-Pin VS T/R |
![]() |
TPC6504 | TOSHIBA |
获取价格 |
Transistor Silicon NPN Epitaxial Type |
![]() |