Datasheet > TPC6502(TE85L)

TPC6502(TE85L)

更新时间： 2024-01-17 10:53:18

品牌	Logo	应用领域
东芝 - TOSHIBA		PC
页数	文件大小	规格书
5页	186K
描述
TPC6502(TE85L)

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中文翻译

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技术参数
数据手册

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TPC6502(TE85L) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

TPC6502(TE85L) 数据手册

TPC6502

TOSHIBA Transistor Silicon NPN Epitaxial Type

TPC6502

High-Speed Switching Applications

Unit: mm

DC-DC Converter Applications

Strobe Applications

•

High DC current gain: h = 400 to 1000 (I = 0.3 A)

Low collector-emitter saturation voltage: V

= 0.14 V (max)

CE (sat)

High-speed switching: t = 120 ns (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

100

CBO

Collector-emitter voltage

Emitter-base voltage

CEX

CEO

EBO

3.0

Collector current

Base current

JEDEC

JEITA

―

Pulse

5.0

300

0.8

TOSHIBA

2-3T1A

Collector power

dissipation

(Note 1)

t = 10 s

1.6

Weight: 0.01 g (typ.)

Junction temperature

150

−55 to 150

°C

Storage temperature range

stg

Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm²)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-03-09

12 3 4 5

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