Datasheet > TPC6602_04

TPC6602_04

更新时间： 2024-01-21 01:29:00

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	153K
描述
High-Speed Switching Applications

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中文翻译

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数据手册

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TPC6602_04 数据手册

TPC6602

TOSHIBA Transistor Silicon PNP Epitaxial Type

TPC6602

High-Speed Switching Applications

Unit: mm

DC-DC Converter Applications

Strobe Applications

•

High DC current gain: h

= 200 to 500 (I = −0.2 A)

Low collector-emitter saturation voltage: V

= −0.19 V (max)

CE (sat)

High-speed switching: t = 25 ns (typ.)

Maximum Ratings

(Ta 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CBO

CEO

EBO

−20

−10

−7

−2.0

−3.5

−200

1.6

Collector current

Base current

Pulse

JEDEC

JEITA

―

t = 10 s

Collector power

dissipation

(Note)

0.8

TOSHIBA

2-3T1

Junction temperature

150

°C

Weight: 0.011 g (typ.)

Storage temperature range

stg

−55~150

Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area:

645 mm )

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= −20 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

⎯

−100

⎯

CBO

Emitter cut-off current

= −7 V, I = 0

EBO

Collector-emitter breakdown voltage

= −10 mA, I = 0

−10

200

125

⎯

(BR) CEO

(1)

(2)

= −2 V, I = −0.2 A

⎯

500

⎯

DC current gain

= −2 V, I = −0.6 A

⎯

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Rise time

= −0.6 A, I = −0.02 A

⎯

−0.19

−1.10

⎯

CE (sat)

BE (sat)

= −0.6 A, I = −0.02 A

⎯

= −10 V, I = 0, f = 1 MHz

⎯

115

⎯

See Figure 1 circuit diagram.

∼

−

Switching time

−6 V, R = 10 Ω

Storage time

Fall time

⎯

stg

= −I = −20 mA

⎯

2004-07-07

12 3 4 5

中文翻译

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