Datasheet > TPC6108_08

TPC6108_08

更新时间： 2024-01-14 11:48:41

品牌	Logo	应用领域
东芝 - TOSHIBA		电脑 PC
页数	文件大小	规格书
7页	221K
描述
Notebook PC Applications

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中文翻译

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TPC6108_08 数据手册

TPC6108

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅣ)

TPC6108

Notebook PC Applications

Portable Equipment Applications

Unit: mm

•

Small footprint due to small and thin package

Low drain-source ON-resistance: R = 50 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 7.4 S (typ.)

Low leakage current: I

= −10 μA (max) (V

= −30 V)

DSS

Enhancement mode: V = −0.8 to −2.0 V (V

= −10 V, I = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−30

±20

−4.5

−18

2.2

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

Source

Drain

Gate

GSS

Drain

Pulse

(Note 1)

Drain current

JEDEC

―

Drain power dissipation (t = 5 s) (Note 2a)

Drain power dissipation (t = 5 s) (Note 2b)

0.7

JEITA

Single-pulse avalanche energy

Avalanche current

(Note 3)

1.3

TOSHIBA

2-3T1A

−2.25

Weight: 0.011 g (typ.)

Repetitive avalanche energy

Single-device value at dual operation

0.22

(Note 4)

Channel temperature

150

°C

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Circuit Configuration

Characteristics

Symbol

Max

56.8

Unit

°C/W

Thermal resistance, channel to ambient (t = 5 s)

th (ch-a)

(Note 2a)

Thermal resistance, channel to ambient (t = 5 s)

178.5

(Note 2b)

Note: For Notes 1 to 5, see page 3.

Caution: This transistor is an electrostatic-sensitive device. Handle with care.

2008-12-04

12 3 4 5 6 7

中文翻译

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