TPC6107

更新时间： 2024-01-17 17:32:33

品牌	Logo	应用领域
东芝 - TOSHIBA		电脑 PC
页数	文件大小	规格书
7页	199K
描述
Silicon P Channel MOS Type (U-MOSIV) Notebook PC Applications

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TPC6107 数据手册

TPC6107

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV)

TPC6107

Notebook PC Applications

Portable Equipment Applications

Unit: mm

•

Small footprint due to small and thin package

Low drain-source ON resistance: R = 40 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 9.6 S (typ.)

= −10 µA (max) (V

Low leakage current: I

= −20 V)

DSS

Enhancement model: V = −0.5 to −1.2 V

= −10 V, I = −200 µA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−20

±12

−4.5

−18

DSS

DGR

GSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

(Note 1)

Drain current

Pulse (Note 1)

JEDEC

JEITA

⎯

Drain power dissipation

(t = 5 s)

2.2

0.7

(Note 2a)

TOSHIBA

2-3T1A

(t = 5 s)

(Note 2b)

Weight: 0.011 g (typ.)

Single pulse avalanche energy(Note 3)

Avalanche current

1.3

−2.25

Repetitive avalanche energy (Note 4)

Channel temperature

0.22

°C

150

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Circuit Configuration

Characteristics

Symbol

Max

56.8

Unit

°C/W

Thermal resistance, channel to ambient

th (ch-a)

(t = 5 s)

(Note 2a)

Thermal resistance, channel to ambient

178.5

(t = 5 s)

(Note 2b)

Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

2006-11-17

12 3 4 5 6 7

中文翻译

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