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TPC6067

更新时间: 2024-01-10 13:23:17
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体电池开关小信号场效应晶体管光电二极管
页数 文件大小 规格书
9页 230K
描述
Lithium-Ion Secondary Batteries Power Management Switches

TPC6067 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.84配置:Single
最大漏极电流 (Abs) (ID):6 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.22 W
子类别:FET General Purpose Power表面贴装:YES
Base Number Matches:1

TPC6067 数据手册

 浏览型号TPC6067的Datasheet PDF文件第2页浏览型号TPC6067的Datasheet PDF文件第3页浏览型号TPC6067的Datasheet PDF文件第4页浏览型号TPC6067的Datasheet PDF文件第5页浏览型号TPC6067的Datasheet PDF文件第6页浏览型号TPC6067的Datasheet PDF文件第7页 
TPC6067  
MOSFETs Silicon N-Channel MOS (U-MOS)  
TPC6067  
1. Applications  
Lithium-Ion Secondary Batteries  
Power Management Switches  
2. Features  
(1) Small, thin package  
(2) Low drain-source on-resistance: RDS(ON) = 18 m(typ.) (VGS = 10 V)  
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)  
(4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)  
3. Packaging and Internal Circuit  
1, 2, 5, 6:Drain  
3: Gate  
4: Source  
VS-6  
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)  
Characteristics  
Symbol  
Rating  
Unit  
V
Drain-source voltage  
Gate-source voltage  
Drain current (DC)  
Drain current (pulsed)  
Power dissipation  
VDSS  
VGSS  
ID  
30  
±20  
(Note 1)  
(Note 1)  
(Note 2)  
(Note 3)  
(Note 4)  
6
24  
A
IDP  
(t = 5 s)  
(t = 5 s)  
PD  
2.2  
W
W
mJ  
A
Power dissipation  
PD  
0.7  
Single-pulse avalanche energy  
Avalanche current  
EAS  
IAR  
28  
6
Channel temperature  
Storage temperature  
Tch  
Tstg  
150  
-55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
2012-05-29  
Rev.1.0  
1

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