Datasheet > TPC6102_06

TPC6102_06

更新时间： 2024-02-09 11:15:59

品牌	Logo	应用领域
东芝 - TOSHIBA		电脑便携式便携式设备 PC
页数	文件大小	规格书
7页	193K
描述
Notebook PC Applications Portable Equipment Applications

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TPC6102_06 数据手册

TPC6102

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

TPC6102

Notebook PC Applications

Portable Equipment Applications

Unit: mm

•

Low drain-source ON resistance: R

= 48 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 6 S (typ.)

Low leakage current: I

= −10 μA (max) (V

= −30 V)

DSS

Enhancement mode: V = −0.8 to −2.0 V (V

= −10 V, I = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−30

±20

−4.5

−18

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation

(t = 5 s)

2.2

0.7

(Note 2a)

JEDEC

JEITA

―

(t = 5 s)

(Note 2b)

TOSHIBA

2-3T1A

Single pulse avalanche energy(Note 3)

Avalanche current

3.3

−2.25

Weight: 0.011 g (typ.)

Repetitive avalanche energy (Note 4)

Channel temperature

0.22

°C

150

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Circuit Configuration

Characteristics

Symbol

Max

56.8

Unit

°C/W

Thermal resistance, channel to ambient

th (ch-a)

(t = 5 s)

(Note 2a)

Thermal resistance, channel to ambient

178.5

(t = 5 s)

(Note 2b)

Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.

This transistor is an electrostatic- ensitive device. Please handle with caution.

2006-11-16

12 3 4 5 6 7

中文翻译

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