5秒后页面跳转
TPC6012 PDF预览

TPC6012

更新时间: 2024-02-20 19:13:10
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号场效应晶体管开关光电二极管电脑便携式便携式设备PC
页数 文件大小 规格书
7页 211K
描述
Notebook PC Applications Portable Equipment Applications

TPC6012 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.68Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):6 A最大漏源导通电阻:0.038 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TPC6012 数据手册

 浏览型号TPC6012的Datasheet PDF文件第2页浏览型号TPC6012的Datasheet PDF文件第3页浏览型号TPC6012的Datasheet PDF文件第4页浏览型号TPC6012的Datasheet PDF文件第5页浏览型号TPC6012的Datasheet PDF文件第6页浏览型号TPC6012的Datasheet PDF文件第7页 
TPC6012  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)  
TPC6012  
Notebook PC Applications  
Portable Equipment Applications  
Unit: mm  
Small footprint due to small and thin package  
Low drain-source ON resistance: R = 20 m(typ.)  
DS (ON)  
Low leakage current: I  
= 10 μA (max) (V  
= 20 V)  
DSS  
DS  
Enhancement mode: V = 0.5 to 1.2 V (V  
= 10 V, I = 200 μA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
20  
20  
V
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
± 12  
6
V
GSS  
I
DC  
(Note 1)  
D
Drain current  
A
I
24  
Pulse (Note 1)  
DP  
Drain power dissipation  
Drain power dissipation  
(t = 5 s)  
2.2  
0.7  
W
W
P
D
D
(Note 2a)  
JEDEC  
JEITA  
(t = 5 s)  
(Note 2b)  
P
2.3  
3
mJ  
A
Single pulse avalanche energy(Note 3)  
Avalanche current  
E
AS  
TOSHIBA  
2-3T1A  
I
AR  
Weight: 0.011 g (typ.)  
150  
Channel temperature  
T
°C  
°C  
ch  
55 to 150  
Storage temperature range  
T
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability  
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.  
reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Circuit Configuration  
6
5
4
Characteristics  
Symbol  
Max  
56.8  
Unit  
Thermal resistance, channel to ambient (t = 5 s)  
R
°C/W  
th (ch-a)  
th (ch-a)  
(Note 2a)  
Thermal resistance, channel to ambient (t = 5 s)  
(Note 2b)  
R
178.5 °C/W  
1
2
3
Note: (Note 1), (Note 2), (Note 3): See other pages.  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2009-08-26  

与TPC6012相关器件

型号 品牌 获取价格 描述 数据表
TPC6012(TE85L) TOSHIBA

获取价格

TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,6A I(D),TSOP
TPC6012,LF(CM TOSHIBA

获取价格

暂无描述
TPC-60-12S TOPPOWER

获取价格

60W Wide input AC/DC switching power supply
TPC-60-15S TOPPOWER

获取价格

60W Wide input AC/DC switching power supply
TPC-60-24S TOPPOWER

获取价格

60W Wide input AC/DC switching power supply
TPC-60-27.5S TOPPOWER

获取价格

60W Wide input AC/DC switching power supply
TPC-60-36S TOPPOWER

获取价格

60W Wide input AC/DC switching power supply
TPC-60-48S TOPPOWER

获取价格

60W Wide input AC/DC switching power supply
TPC-60-5S TOPPOWER

获取价格

60W Wide input AC/DC switching power supply
TPC6067 TOSHIBA

获取价格

Lithium-Ion Secondary Batteries Power Management Switches