TPC6012,LF(CM

更新时间： 2024-10-28 12:59:51

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体小信号场效应晶体管开关光电二极管电脑便携式便携式设备 PC
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数据手册

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TPC6012,LF(CM 数据手册

TPC6012

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)

TPC6012

Notebook PC Applications

Portable Equipment Applications

Unit: mm

•

Small footprint due to small and thin package

Low drain-source ON resistance: R = 20 mΩ (typ.)

DS (ON)

Low leakage current: I

= 10 μA (max) (V

= 20 V)

DSS

Enhancement mode: V = 0.5 to 1.2 V (V

= 10 V, I = 200 μA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

± 12

GSS

(Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation

(t = 5 s)

2.2

0.7

(Note 2a)

JEDEC

JEITA

―

(t = 5 s)

(Note 2b)

2.3

Single pulse avalanche energy(Note 3)

Avalanche current

TOSHIBA

2-3T1A

Weight: 0.011 g (typ.)

150

Channel temperature

°C

−55 to 150

Storage temperature range

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Circuit Configuration

Characteristics

Symbol

Max

56.8

Unit

Thermal resistance, channel to ambient (t = 5 s)

°C/W

th (ch-a)

(Note 2a)

Thermal resistance, channel to ambient (t = 5 s)

(Note 2b)

178.5 °C/W

Note: (Note 1), (Note 2), (Note 3): See other pages.

This transistor is an electrostatic-sensitive device. Please handle with caution.

2009-08-26

12 3 4 5 6 7

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