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TPC6004(TE85L,F)

更新时间： 2024-11-11 19:58:47
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 217K
描述
Small Signal Field-Effect Transistor

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中文翻译

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TPC6004(TE85L,F) 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：unknown风险等级：5.68
Base Number Matches：1

TPC6004(TE85L,F) 数据手册

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TPC6004  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)  
TPC6004  
Notebook PC Applications  
Portable Equipment Applications  
Unit: mm  
•
•
•
•
Low drain-source ON resistance: R  
= 19 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 11 S (typ.)  
fs  
Low leakage current: I  
= 10 μA (max) (V  
= 20 V)  
DSS  
DS  
Enhancement mode: V = 0.5 to 1.2 V (V  
= 10 V, I = 200 μA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
20  
20  
±12  
6
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
24  
DP  
Drain power dissipation  
Drain power dissipation  
(t = 5 s)  
JEDEC  
JEITA  
―
―
P
2.2  
0.7  
W
W
D
D
(Note 2a)  
(t = 5 s)  
(Note 2b)  
P
TOSHIBA  
2-3T1A  
Single pulse avalanche energy(Note 3)  
Avalanche current  
E
5.8  
3
mJ  
A
AS  
Weight: 0.011 g (typ.)  
I
AR  
Repetitive avalanche energy (Note 4)  
Channel temperature  
E
0.22  
mJ  
°C  
°C  
AR  
T
150  
ch  
Storage temperature range  
T
stg  
−55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Circuit Configuration  
6
5
4
Characteristics  
Symbol  
Max  
56.8  
Unit  
°C/W  
°C/W  
Thermal resistance, channel to ambient  
R
th (ch-a)  
th (ch-a)  
(t = 5 s)  
(Note 2a)  
Thermal resistance, channel to ambient  
R
178.5  
(t = 5 s)  
(Note 2b)  
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2
3
1
2009-09-29  
1234567

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