Datasheet > TPC6005_07

TPC6005_07

更新时间： 2022-12-19 08:48:42

品牌	Logo	应用领域
东芝 - TOSHIBA		电脑便携式便携式设备 PC
页数	文件大小	规格书
7页	256K
描述
Notebook PC Applications Portable Equipment Applications

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TPC6005_07 数据手册

TPC6005

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

TPC6005

Notebook PC Applications

Portable Equipment Applications

Unit: mm

•

Low drain-source ON resistance: R

= 21 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 10 S (typ.)

Low leakage current: I

= 10 µA (max) (V

= 30 V)

DSS

Enhancementmode: V = 0.5 to 1.2 V (V

= 10 V, I = 200 µA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

±12

DSS

Drain-gate voltage (R

= 20 kΩ)

DGR

Gate-source voltage

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

Drain power dissipation

(t = 5 s)

2.2

0.7

5.8

(Note 2a)

JEDEC

JEITA

―

(t = 5 s)

(Note 2b)

TOSHIBA

2-3T1A

Single pulse avalanche energy

(Note 3)

Weight: 0.011 g (typ.)

Avalanche current

0.22

Repetitive avalanche energy (Note 4)

Channel temperature

°C

150

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Circuit Configuration

Characteristics

Symbol

Max

56.8

Unit

°C/W

Thermal resistance, channel to ambient

th (ch-a)

(t = 5 s)

(Note 2a)

Thermal resistance, channel to ambient

178.5

(t = 5 s)

(Note 2b)

Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

2007-01-15

12 3 4 5 6 7

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