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TPC6001 PDF预览

TPC6001

更新时间: 2024-01-04 04:29:00
品牌 Logo 应用领域
东芝 - TOSHIBA 电脑便携式便携式设备PC
页数 文件大小 规格书
7页 201K
描述
Notebook PC Applications Portable Equipment Applications

TPC6001 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.87配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):6 A
最大漏极电流 (ID):6 A最大漏源导通电阻:0.06 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON

TPC6001 数据手册

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TPC6001  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)  
TPC6001  
Notebook PC Applications  
Portable Equipment Applications  
Unit: mm  
Low drain-source ON resistance: R  
= 22 m(typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 15 S (typ.)  
fs  
Low leakage current: I  
= 10 µA (max) (V  
= 20 V)  
DSS  
DS  
Enhancement mode: V = 0.5 to 1.2 V (V  
= 10 V, I = 200 µA)  
th DS  
D
Maximum Ratings  
=
(Ta 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
20  
20  
±12  
6
V
V
V
DSS  
Drain-gate voltage (R  
= 20 k)  
V
DGR  
GS  
Gate-source voltage  
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
D
Drain current  
A
I
24  
DP  
Drain power dissipation  
Drain power dissipation  
(t = 5 s)  
P
2.2  
0.7  
5.8  
W
W
D
D
(Note 2a)  
JEDEC  
JEITA  
(t = 5 s)  
(Note 2b)  
P
TOSHIBA  
2-3T1A  
Single pulse avalanche energy  
(Note 3)  
E
mJ  
AS  
Weight: 0.011 g (typ.)  
Avalanche current  
I
3
0.22  
A
AR  
Repetitive avalanche energy (Note 4)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
ch  
150  
Circuit Configuration  
Storage temperature range  
T
stg  
55 to 150  
6
5
4
3
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
°C/W  
°C/W  
Thermal resistance, channel to ambient  
(t = 5 s)  
R
56.8  
th (ch-a)  
th (ch-a)  
(Note 2a)  
1
2
Thermal resistance, channel to ambient  
(t = 5 s) (Note 2b)  
R
178.5  
Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.  
This transistor is an electrostatic-sensitive device. Please handle it with caution.  
1
2004-07-06  

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