TM2EP64DPN, TM2EP64DJN, TM4EP64DPN, TM4EP64DJN
TM2EP72DPN, TM2EP72DJN, TM4EP72DPN, TM4EP72DJN
EXTENDED-DATA-OUT DYNAMIC RAM MODULES
SMMS684A – AUGUST 1997 – REVISED FEBRUARY 1998
Organization
JEDEC 168-Pin Dual-In-Line Memory
– TM2EP64DxN . . . 2097152 × 64 Bits
– TM2EP72DxN . . . 2097152 × 72 Bits
– TM4EP64DxN . . . 4194304 × 64 Bits
– TM4EP72DxN . . . 4194304 × 72 Bits
Module (DIMM) Without Buffer for Use With
Socket
High-Speed, Low-Noise LVTTL Interface
Long Refresh Period: 32 ms (2 048 Cycles)
3-State Output
Single 3.3-V Power Supply
(±10% Tolerance)
Extended-Data-Out (EDO) Operation With
CAS-Before-RAS (CBR), RAS-Only, and
Hidden Refresh
TM2EP64DxN — Uses Eight 16M-Bit
(2M×8-Bit) Dynamic Random Access
Memories (DRAMs) in Thin Small-Outline
Package (TSOP), or Small-Outline J-Lead
Package (SOJ)
Serial Presence Detect (SPD) Using
EEPROM
Ambient Air Temperature Range
0°C to 70°C
TM2EP72DxN — Uses Nine 16M-Bit
(2M×8-Bit) DRAMs in TSOP, or SOJ
Gold-Plated Contacts
TM4EP64DxN — Uses 16 16M-Bit
(2M×8-Bit) DRAMs in TSOP, or SOJ
TM4EP72DxN — Uses 18 16M-Bit
(2M×8-Bit) DRAMs in TSOP, or SOJ
Performance ranges
ACCESS ACCESS ACCESS
TIME TIME TIME
EDO
CYCLE
t
t
t
t
RAC
CAC
AA
HPC
MAX
50 ns
60 ns
70 ns
MAX
13 ns
15 ns
18 ns
MAX
25 ns
30 ns
35 ns
MIN
’xEPxxDxN-50
’xEPxxDxN-60
’xEPxxDxN-70
20 ns
25 ns
30 ns
description
The TM2EP64DPN is a 16M-byte, 168-pin, dual-in-line memory module (DIMM). The DIMM is composed of
eight TMS427809A, 2097152 byte × 8-bit 2K-refresh EDO DRAMs, each in a 400-mil, 28-pin plastic TSOP
(DGC suffix) mounted on a substrate with decoupling capacitors. See the TMS427809A data sheet (literature
number SMKS887). The TM2EP64DJN is available with an SOJ package (DZ suffix).
The TM2EP72DPN is a 16M-byte, 168-pin DIMM. The DIMM is composed of nine TMS427809A,
2097152 byte × 8-bit 2K-refresh EDO DRAMs, mounted on a substrate with decoupling capacitors. See the
TMS427809A data sheet (literature number SMKS887). The TM2EP72DJN is available with an SOJ package
(DZ suffix).
The TM4EP64DPN is a 32M-byte, 168-pin, dual-in-line memory module (DIMM). The DIMM is composed of
sixteen TMS427809A, 2097152 × 8-bit 2K-refresh EDO DRAMs, mounted on a substrate with decoupling
capacitors. The TM4EP64DJN is available with an SOJ package (DZ suffix).
The TM4EP72DPN is a 32M-byte, 168-pin DIMM. The DIMM is composed of 18 TMS427809A, 2097152 × 8-bit
2K-refresh EDO DRAMs, mounted on a substrate with decoupling capacitors. See the TMS427809A data sheet
(literature number SMKS887). The TM4EP72DJN is available with an SOJ package (DZ suffix).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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