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TM4SK64KPN-10

更新时间： 2024-11-05 21:14:35
品牌 Logo 应用领域
德州仪器 - TI 时钟动态存储器内存集成电路
页数 文件大小 规格书
15页 229K
描述
4MX64 SYNCHRONOUS DRAM MODULE, 7ns, DMA144, SODIMM-144

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TM4SK64KPN-10 技术参数

生命周期：Obsolete零件包装代码：MODULE
包装说明：DIMM, DIMM144,32针数：144
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.24风险等级：5.84
访问模式：FOUR BANK PAGE BURST最长访问时间：7 ns
其他特性：AUTO/SELF REFRESH最大时钟频率 (fCLK)：100 MHz
I/O 类型：COMMONJESD-30 代码：R-XDMA-N144
内存密度：268435456 bit内存集成电路类型：SYNCHRONOUS DRAM MODULE
内存宽度：64功能数量：1
端口数量：1端子数量：144
字数：4194304 words字数代码：4000000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：4MX64
输出特性：3-STATE封装主体材料：UNSPECIFIED
封装代码：DIMM封装等效代码：DIMM144,32
封装形状：RECTANGULAR封装形式：MICROELECTRONIC ASSEMBLY
电源：3.3 V认证状态：Not Qualified
刷新周期：4096自我刷新：YES
最大待机电流：0.001 A子类别：DRAMs
最大压摆率：0.2 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：3 V标称供电电压 (Vsup)：3.3 V
表面贴装：NO技术：CMOS
温度等级：COMMERCIAL端子形式：NO LEAD
端子节距：0.8 mm端子位置：DUAL
Base Number Matches：1

TM4SK64KPN-10 数据手册

 浏览型号TM4SK64KPN-10的Datasheet PDF文件第2页浏览型号TM4SK64KPN-10的Datasheet PDF文件第3页浏览型号TM4SK64KPN-10的Datasheet PDF文件第4页浏览型号TM4SK64KPN-10的Datasheet PDF文件第5页浏览型号TM4SK64KPN-10的Datasheet PDF文件第6页浏览型号TM4SK64KPN-10的Datasheet PDF文件第7页 
TM4SK64KPN 4194304 BY 64-BIT  
TM8SK64KPN 8388608 BY 64-BIT  
SYNCHRONOUS DYNAMIC RAM MODULES — SODIMM  
SMMS709 – APRIL 1998  
Organization:  
High-Speed, Low-Noise, Low-Voltage TTL  
– TM4SK64KPN . . . 4 194 304 x 64 Bits  
– TM8SK64KPN . . . 8 388 608 x 64 Bits  
(LVTTL) Interface  
Read Latencies 2 and 3 Supported  
Single 3.3-V Power Supply  
(±10% Tolerance)  
Support Burst-Interleave and  
Burst-Interrupt Operations  
Designed for 66-MHz 4-Clock Systems  
Burst Length Programmable to 1, 2, 4, and 8  
JEDEC 144-Pin Small-Outline Dual-In-Line  
Memory Module (SODIMM) Without Buffer  
for Use With Socket  
Four Banks for On-Chip Interleaving  
(Gapless Access)  
Ambient Temperature Range  
TM4SK64KPN — Uses Four 64M-Bit  
Synchronous Dynamic RAMs (SDRAMs)  
(4M × 16-Bit) in Plastic Thin Small-Outline  
Packages (TSOPs)  
0°C to 70°C  
Gold-Plated Contacts  
Pipeline Architecture  
Serial Presence Detect (SPD) Using  
EEPROM  
TM8SK64KPN — Uses Eight 64M-Bit  
SDRAMs (4M × 16-Bit) in Plastic TSOPs  
Byte-Read/Write Capability  
Performance Ranges:  
SYNCHRONOUS  
CLOCK CYCLE  
TIME  
ACCESS TIME  
CLOCK TO  
OUTPUT  
REFRESH  
INTERVAL  
t
t
t
t
t
CK3  
10 ns  
CK2  
15 ns  
AC3  
7 ns  
AC2  
7 ns  
REF  
64 ms  
’xSK64KPN–10  
description  
The TM4SK64KPN is a 32M-byte, 144-pin small-outline dual-in-line memory module (SODIMM). The SODIMM  
is composed of four TMS664164DGE, 4194304 x 16-bit SDRAMs, each in a 400-mil, 54-pin plastic thin  
small-outline package (TSOP) mounted on a substrate with decoupling capacitors. See the TMS664164 data  
sheet (literature number SMOS695).  
The TM8SK64KPN is a 64M-byte, 144-pin SODIMM. The SODIMM is composed of eight TMS664164DGE,  
4194304 x 16-bit SDRAMs, each in a 400-mil, 54-pin plastic TSOP mounted on a substrate with decoupling  
capacitors. See the TMS664164 data sheet (literature number SMOS695).  
operation  
The TM4SK64KPN operates as four TMS664164DGE devices that are connected as shown in the  
TM4SK64KPN functional block diagram. The TM8SK64KPN operates as eight TMS664164DGE devices  
connected as shown in the TM8SK64KPN functional block diagram.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1998, Texas Instruments Incorporated  
PRODUCT PREVIEW information concerns products in the formative or  
design phase of development. Characteristic data and other  
specifications are design goals. Texas Instruments reserves the right to  
change or discontinue these products without notice.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...15

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