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TK12A55D PDF预览

TK12A55D

更新时间: 2024-11-18 12:23:03
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体稳压器开关晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
6页 194K
描述
Switching Regulator Applications

TK12A55D 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SC-67包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.36Is Samacsys:N
雪崩能效等级(Eas):317 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:550 V
最大漏极电流 (Abs) (ID):12 A最大漏极电流 (ID):12 A
最大漏源导通电阻:0.57 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):45 W
最大脉冲漏极电流 (IDM):48 A子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TK12A55D 数据手册

 浏览型号TK12A55D的Datasheet PDF文件第2页浏览型号TK12A55D的Datasheet PDF文件第3页浏览型号TK12A55D的Datasheet PDF文件第4页浏览型号TK12A55D的Datasheet PDF文件第5页浏览型号TK12A55D的Datasheet PDF文件第6页 
TK12A55D  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)  
TK12A55D  
Switching Regulator Applications  
Unit: mm  
2.7 ± 0.2  
10 ± 0.3  
Ф3.2 ± 0.2  
A
Low drain-source ON-resistance: R  
High forward transfer admittance: |Y | = 6.0 S (typ.)  
= 0.48 (typ.)  
DS (ON)  
fs  
Low leakage current: I  
= 10 μA (max) (V  
= 550 V)  
DSS  
DS  
Enhancement mode: V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
1.14 ± 0.15  
0.69 ± 0.15  
Absolute Maximum Ratings (Ta = 25°C)  
M A  
Ф0.2  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
2.54  
2.54  
1
2
3
V
V
550  
±30  
12  
V
V
DSS  
Gate-source voltage  
GSS  
DC  
(Note 1)  
I
D
1: Gate  
2: Drain  
3: Source  
Drain current  
A
Pulse (Note 1)  
I
48  
DP  
Drain power dissipation (Tc = 25°C)  
P
45  
W
D
AS  
AR  
JEDEC  
JEITA  
Single pulse avalanche energy  
E
317  
mJ  
(Note 2)  
SC-67  
Avalanche current  
I
12  
4.5  
A
TOSHIBA  
2-10U1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 1.7 g (typ.)  
T
ch  
150  
Storage temperature range  
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability  
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.  
reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
2
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
2.78  
62.5  
°C/W  
°C/W  
th (ch-c)  
R
th (ch-a)  
1
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 90 V, T = 25°C(initial), L = 3.8 mH, R = 25 Ω, I = 12 A  
V
DD  
ch  
G
AR  
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Handle with care.  
3
1
2011-04-26  

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