是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | SC-67 | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.65 | Is Samacsys: | N |
雪崩能效等级(Eas): | 359 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (Abs) (ID): | 12 A | 最大漏极电流 (ID): | 12 A |
最大漏源导通电阻: | 0.55 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 45 W |
最大脉冲漏极电流 (IDM): | 48 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TK12A60U | TOSHIBA |
获取价格 |
Field Effect Transistor Silicon N Channel MOS | |
TK12A60W | TOSHIBA |
获取价格 |
Switching Voltage Regulators | |
TK12A65D | TOSHIBA |
获取价格 |
Switching Voltage Regulators | |
TK12A80W | TOSHIBA |
获取价格 |
N-ch MOSFET, 800 V, 0.45 Ω@10V, TO-220SIS, DT | |
TK12D60U | TOSHIBA |
获取价格 |
Field Effect Transistor Silicon N Channel MOS | |
TK12E60U | TOSHIBA |
获取价格 |
Switching Voltage Regulators | |
TK12E60W | TOSHIBA |
获取价格 |
Switching Voltage Regulators | |
TK12E80W | TOSHIBA |
获取价格 |
N-ch MOSFET, 800 V, 0.45 Ω@10V, TO-220, DTMOS | |
TK12J55D | TOSHIBA |
获取价格 |
TRANSISTOR 12 A, 550 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-16C1B, S | |
TK12J60U | TOSHIBA |
获取价格 |
Switching Regulator Applications |