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TK12A60D PDF预览

TK12A60D

更新时间: 2024-11-06 12:23:03
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东芝 - TOSHIBA 晶体稳压器开关晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
6页 192K
描述
Switching Regulator Applications

TK12A60D 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SC-67包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.65Is Samacsys:N
雪崩能效等级(Eas):359 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):12 A最大漏极电流 (ID):12 A
最大漏源导通电阻:0.55 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):45 W
最大脉冲漏极电流 (IDM):48 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TK12A60D 数据手册

 浏览型号TK12A60D的Datasheet PDF文件第2页浏览型号TK12A60D的Datasheet PDF文件第3页浏览型号TK12A60D的Datasheet PDF文件第4页浏览型号TK12A60D的Datasheet PDF文件第5页浏览型号TK12A60D的Datasheet PDF文件第6页 
TK12A60D  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)  
TK12A60D  
Switching Regulator Applications  
Unit: mm  
2.7 ± 0.2  
10 ± 0.3  
Ф3.2 ± 0.2  
A
Low drain-source ON resistance: R  
High forward transfer admittance: Y = 7.5 S (typ.)  
= 0.45 (typ.)  
DS (ON)  
fs  
Low leakage current: I  
= 10 μA (max) (V  
= 600 V)  
DSS  
DS  
Enhancement-mode: V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
1.14 ± 0.15  
0.69 ± 0.15  
Absolute Maximum Ratings (Ta = 25°C)  
M A  
Ф0.2  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
2.54  
2.54  
V
V
600  
±30  
12  
V
V
DSS  
1
2
3
Gate-source voltage  
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
48  
DP  
1: Gate  
2: Drain  
3: Source  
Drain power dissipation (Tc = 25°C)  
P
45  
W
D
AS  
AR  
Single pulse avalanche energy  
E
359  
mJ  
(Note 2)  
JEDEC  
JEITA  
Avalanche current  
I
12  
4.5  
A
SC-67  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
TOSHIBA  
2-10U1B  
T
ch  
150  
Weight : 1.7 g (typ.)  
Storage temperature range  
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability  
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.  
reliability test report and estimated failure rate, etc).  
Internal Connection  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
2
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
2.78  
62.5  
°C/W  
°C/W  
th (ch-c)  
R
th (ch-a)  
Note 1: Please use devices on conditions that the channel temperature is below 150°C.  
Note 2: = 90 V, T = 25°C (initial), L = 4.36 mH, R = 25 Ω, I = 12 A  
1
V
DD  
ch  
G
AR  
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic sensitive device. Please handle with caution.  
3
1
2010-08-12  

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