TK12X53D

更新时间： 2024-11-21 12:23:03

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	195K
描述
Switching Regulator Applications

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数据手册

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TK12X53D 数据手册

TK12X53D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

TK12X53D

Switching Regulator Applications

Unit: mm

9.2 MAX.

7.0 ± 0.2

0.4 ± 0.1

•

Low drain-source ON resistance: R

High forward transfer admittance: ⎪Y ⎪ = 6.0 S (typ.)

= 0.5 Ω (typ.)

DS (ON)

Low leakage current: I

= 10 μA (max) (V

= 525 V)

DSS

Enhancement-mode: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

2.0 1.5 2.0 2.5

Characteristics

Drain-source voltage

Symbol

Rating

Unit

525

±30

DSS

Gate-source voltage

3.6 ± 0.2

GSS

1.0 ± 0.2 1.0 ± 0.2

(Note 1)

Drain current

：G

1. GATE

2. N.C.

3. SOURCE

4. DRAIN

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

150

：S

：D

Single pulse avalanche energy

378

(Note 2)

JEDEC

⎯

Avalanche current

JEITA

SC-97

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

2-9F1C

150

Weight : 0.74 g (typ.)

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Internal Connection

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

0.833

°C/W

th (ch-c)

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 4.5 mH, R = 25 Ω, I = 12 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

2010-08-27

12 3 4 5 6

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