TK13A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK13A50D
Switching Regulator Applications
Unit: mm
2.7 ± 0.2
10 ± 0.3
Ф3.2 ± 0.2
A
•
•
•
•
Low drain-source ON resistance: R
High forward transfer admittance: ⎪Y ⎪ = 7.5 S (typ.)
= 0.31 Ω (typ.)
DS (ON)
fs
Low leakage current: I
= 10 μA (max) (V
= 500 V)
DSS
DS
Enhancement-mode: V = 2.0 to 4.0 V (V
= 10 V, I = 1 mA)
D
th
DS
1.14 ± 0.15
0.69 ± 0.15
Absolute Maximum Ratings (Ta = 25°C)
M A
Ф0.2
Characteristics
Drain-source voltage
Symbol
Rating
Unit
2.54
2.54
V
V
500
±30
13
V
V
DSS
1
2
3
Gate-source voltage
GSS
DC
(Note 1)
I
D
Drain current
A
1: Gate
2: Drain
Pulse (Note 1)
I
52
DP
Drain power dissipation (Tc = 25°C)
3: Source
P
45
W
D
Single pulse avalanche energy
E
I
390
mJ
AS
JEDEC
JEITA
⎯
(Note 2)
Avalanche current
13
4.5
A
SC-67
AR
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
TOSHIBA
2-10U1B
T
150
ch
Weight : 1.7 g (typ.)
Storage temperature range
T
stg
−55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Internal Connection
Thermal Characteristics
Characteristics
Symbol
Max
Unit
2
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
2.78
62.5
°C/W
°C/W
th (ch-c)
R
th (ch-a)
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: = 90 V, T = 25°C (initial), L = 3.92 mH, R = 25 Ω, I = 13 A
1
V
DD
ch
G
AR
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1
2010-08-26