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TK130F06K3(TE24L,Q) PDF预览

TK130F06K3(TE24L,Q)

更新时间： 2024-10-02 20:03:39
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 212K
描述
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,130A I(D),TO-263ABVAR

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中文翻译

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TK130F06K3(TE24L,Q) 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.84配置：Single
最大漏极电流 (Abs) (ID)：130 AFET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：300 W
子类别：FET General Purpose Power表面贴装：YES
Base Number Matches：1

TK130F06K3(TE24L,Q) 数据手册

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TK130F06K3  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)  
TK130F06K3  
Swiching Regulator, DC-DC Converter Applications  
Motor Drive Applications  
Unit: mm  
•
•
•
•
Low drain-source ON resistance: R  
= 2.6 mΩ (typ.)  
DS (ON)  
10.0 ± 0.3  
9.5 ± 0.2  
High forward transfer admittance: |Y | = 220 S (typ.)  
fs  
0.4 ± 0.1  
Low leakage current: I  
= 10 μA (max) (V  
= 60 V)  
DSS  
DS  
Enhancement-model: V = 3.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
1.1  
Absolute Maximum Ratings (Ta = 25°C)  
0.76 ± 0.1  
1.4 ± 0.1  
2.35 ± 0.1  
0.4 ± 0.1  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
2.54 ± 0.25  
2.34 ± 0.25  
V
60  
60  
V
V
V
1
2
3
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
DGR  
GS  
V
±20  
130  
390  
300  
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
1. GATE  
Pulse (Note 1)  
I
DP  
2. DRAIN  
（HEAT SINK）  
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
3. SOURSE  
8.0  
Single pulse avalanche energy  
E
176  
mJ  
(Note 2)  
JEDEC  
JEITA  
⎯
⎯
Avalanche current  
I
130  
30  
A
Repetitive avalanche energy (Note 3)  
E
mJ  
°C  
°C  
AR  
TOSHIBA  
2-10W1A  
Channel temperature  
(Note 4)  
(Note 4)  
T
ch  
175  
Weight: 1.07 g (typ.)  
Storage temperature range  
T
stg  
−55 to 175  
2
Thermal Characteristics  
Characteristics  
Symbol  
Max  
0.5  
Unit  
1
Thermal resistance, channel to case  
R
°C/W  
th (ch-c)  
Note 1: Please use devices on condition that the channel temperature is below 175°C.  
Note 2: = 25 V, T = 25°C, L = 14 μH, R = 25 Ω, I = 130 A  
3
V
DD  
ch  
G
AR  
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.  
Note 4: 175°C refers to AEC-Q101.  
Note 5: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
This transistor is an electrostatic sensitive device. Please handle with caution.  
1
2009-04-17  
1234567

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