Datasheet > TK12P60W

TK12P60W

更新时间： 2024-11-18 11:59:35

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描述
Silicon N Channel MOS Type

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TK12P60W 数据手册

TK12P60W

Silicon N Channel MOS Type (DTMOSⅣ)

Switching Regulator Applications

Unit: mm

6.6 ± 0.2

5.34 ± 0.13

•

Low drain-source ON-resistance : R

by used to Super Junction Structure : DTMOS

= 0.256Ω (typ.)

DS (ON)

0.58MAX

•

Easy to control Gate switching

Enhancement-mode: V = 2.7 to 3.7 V (V

= 10 V, I = 0.6 mA)

Absolute Maximum Ratings (Ta = 25°C)

1.14MAX

2.29

Characteristics

Drain-source voltage

Symbol

Rating

Unit

0.76 ± 0.12

600

±30

11.5

46.0

100

DSS

Gate-source voltage

GSS

Drain current (Continuous)

Drain current (Pulsed)

(Note 1)

1. GATE

2. DRAIN

（HEAT SINK）

3. SOURCE

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

(Note 2)

JEDEC

JEITA

⎯

Avalanche current

5.8

Drain reverse current (Continuous)

11.5

(Note 1)

TOSHIBA

2-7K1A

Drain reverse current (Pulsed) (Note 1)

Channel temperature

46.0

150

DRP

Weight : 0.36 g (typ.)

°C

Storage temperature range

-55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Internal Connection

Thermal Characteristics

Characteristics

Symbol

Max

1.25

Unit

Thermal resistance, channel to case

°C/W

th (ch-c)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 4.83 mH, R = 25 Ω, I = 5.8 A

This transistor is an electrostatic-sensitive device. Handle with care.

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