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TK12J60U PDF预览

TK12J60U

更新时间: 2024-11-06 07:04:31
品牌 Logo 应用领域
东芝 - TOSHIBA 稳压器开关
页数 文件大小 规格书
6页 194K
描述
Switching Regulator Applications

TK12J60U 技术参数

生命周期:End Of Life零件包装代码:SC-65
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.31
配置:Single最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):12 A最大漏极电流 (ID):12 A
最大漏源导通电阻:0.4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):144 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管元件材料:SILICON
Base Number Matches:1

TK12J60U 数据手册

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TK12J60U  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS)  
TK12J60U  
Switching Regulator Applications  
Unit: mm  
15.9 MAX.  
Ф3.2 ± 0.2  
Low drain-source ON resistance: R  
High forward transfer admittance: Y = 7.0 S (typ.)  
= 0.36Ω (typ.)  
DS (ON)  
fs  
Low leakage current: I  
= 100 μA (V  
= 600 V)  
DS  
DSS  
Enhancement-mode: V = 3.0~5.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
2.0 ± 0.3  
0.3  
1.0  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
0.25  
V
V
600  
±30  
12  
V
V
DSS  
5.45 ± 0.2  
5.45 ± 0.2  
Gate-source voltage  
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (t = 1 ms)  
1
2
3
I
24  
144  
69  
DP  
(Note 1)  
1. Gate  
2. Drain(heat sink)  
3. Source  
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
Single pulse avalanche energy  
E
mJ  
JEDEC  
(Note 2)  
Avalanche current  
(Note 3)  
I
12  
14  
A
JEITA  
SC-65  
2-16C1B  
Repetitive avalanche energy  
Channel temperature  
E
mJ  
°C  
°C  
AR  
TOSHIBA  
T
150  
ch  
Weight : 4.6 g (typ.)  
Storage temperature range  
T
55 to 150  
stg  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor  
Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data  
(i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
2
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
0.868  
50  
°C/W  
°C/W  
th (ch-c)  
R
th (ch-a)  
Note 1: Please use devices on conditions that the channel temperature is below 150°C.  
Note 2: V = 90 V, T = 25°C (initial), L = 0.84 mH, R = 25Ω, I = 12 A  
1
DD  
ch  
G
AR  
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic sensitive device. Please handle with caution.  
3
1
2008-06-11  

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