TK12J60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
TK12J60U
Switching Regulator Applications
Unit: mm
15.9 MAX.
Ф3.2 ± 0.2
•
•
•
•
Low drain-source ON resistance: R
High forward transfer admittance: ⎪Y ⎪ = 7.0 S (typ.)
= 0.36Ω (typ.)
DS (ON)
fs
Low leakage current: I
= 100 μA (V
= 600 V)
DS
DSS
Enhancement-mode: V = 3.0~5.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
2.0 ± 0.3
+0.3
1.0
Characteristics
Drain-source voltage
Symbol
Rating
Unit
-0.25
V
V
600
±30
12
V
V
DSS
5.45 ± 0.2
5.45 ± 0.2
Gate-source voltage
GSS
DC
(Note 1)
I
D
Drain current
A
Pulse (t = 1 ms)
1
2
3
I
24
144
69
DP
(Note 1)
1. Gate
2. Drain(heat sink)
3. Source
Drain power dissipation (Tc = 25°C)
P
W
D
AS
AR
Single pulse avalanche energy
E
mJ
JEDEC
(Note 2)
⎯
Avalanche current
(Note 3)
I
12
14
A
JEITA
SC-65
2-16C1B
Repetitive avalanche energy
Channel temperature
E
mJ
°C
°C
AR
TOSHIBA
T
150
ch
Weight : 4.6 g (typ.)
Storage temperature range
T
−55 to 150
stg
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
2
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
0.868
50
°C/W
°C/W
th (ch-c)
R
th (ch-a)
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V = 90 V, T = 25°C (initial), L = 0.84 mH, R = 25Ω, I = 12 A
1
DD
ch
G
AR
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1
2008-06-11